"Influence of Drain and Gate Potential on Gate Failure in Semi-Vertical ..."

Davide Favero et al. (2022)

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DOI: 10.1109/IRPS48227.2022.9764600

access: closed

type: Conference or Workshop Paper

metadata version: 2024-08-04

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Davide Favero, Carlo De Santi, Kalparupa Mukherjee, Karen Geens, Matteo Borga, Benoit Bakeroot, Shuzhen You, Stefaan Decoutere, Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini:
Influence of Drain and Gate Potential on Gate Failure in Semi-Vertical GaN-on-Si Trench MOSFETs. IRPS 2022: 20-1

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