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2010 – 2019
- 2016
[j7]Gaudenzio Meneghesso, Matteo Meneghini
, Davide Bisi, Isabella Rossetto, Tian-Li Wu, Marleen Van Hove, Denis Marcon, Steve Stoffels, Stefaan Decoutere, Enrico Zanoni:
Trapping and reliability issues in GaN-based MIS HEMTs with partially recessed gate. Microelectron. Reliab. 58: 151-157 (2016)- [j6]Isabella Rossetto, Matteo Meneghini, Vanessa Rizzato, Maria Ruzzarin, Andrea Favaron, Steve Stoffels, Marleen Van Hove, Niels Posthuma, Tian-Li Wu, Denis Marcon, Stefaan Decoutere, Gaudenzio Meneghesso, Enrico Zanoni:
Study of the stability of e-mode GaN HEMTs with p-GaN gate based on combined DC and optical analysis. Microelectron. Reliab. 64: 547-551 (2016) - 2015
- [j5]Isabella Rossetto, Matteo Meneghini, Davide Bisi, Alessandro Barbato, Marleen Van Hove, Denis Marcon, Tian-Li Wu, Stefaan Decoutere, Gaudenzio Meneghesso, Enrico Zanoni:
Impact of gate insulator on the dc and dynamic performance of AlGaN/GaN MIS-HEMTs. Microelectron. Reliab. 55(9-10): 1692-1696 (2015) - [c3]Tian-Li Wu, Denis Marcon, Brice De Jaeger, Marleen Van Hove, Benoit Bakeroot, Steve Stoffels, Guido Groeseneken, Stefaan Decoutere, Robin Roelofs:
Time dependent dielectric breakdown (TDDB) evaluation of PE-ALD SiN gate dielectrics on AlGaN/GaN recessed gate D-mode MIS-HEMTs and E-mode MIS-FETs. IRPS 2015: 6 - 2014
- [j4]Tian-Li Wu, Denis Marcon, Steve Stoffels, Shuzhen You, Brice De Jaeger, Marleen Van Hove, Guido Groeseneken, Stefaan Decoutere:
Stability evaluation of Au-free Ohmic contacts on AlGaN/GaN HEMTs under a constant current stress. Microelectron. Reliab. 54(9-10): 2232-2236 (2014) - [c2]Fabio Alessio Marino, Davide Bisi, Matteo Meneghini, Giovanni Verzellesi, Enrico Zanoni, Marleen Van Hove, Shuzhen You, Stefaan Decoutere, Denis Marcon, Steve Stoffels, Nicolo Ronchi, Gaudenzio Meneghesso:
Breakdown investigation in GaN-based MIS-HEMT devices. ESSDERC 2014: 377-380 - 2012
- [j3]Denis Marcon, John Viaene, Paola Favia, Hugo Bender, Xuanwu Kang, Silvia Lenci, Steve Stoffels, Stefaan Decoutere:
Reliability of AlGaN/GaN HEMTs: Permanent leakage current increase and output current drop. Microelectron. Reliab. 52(9-10): 2188-2193 (2012) - [j2]Paul Marko, Matteo Meneghini, Sergey Bychikhin, Denis Marcon, Gaudenzio Meneghesso, Enrico Zanoni, Dionyz Pogany:
IV, noise and electroluminescence analysis of stress-induced percolation paths in AlGaN/GaN high electron mobility transistors. Microelectron. Reliab. 52(9-10): 2194-2199 (2012) - [c1]Dirk Wellekens, Rafael Venegas, Xuanwu Kang, Mohammed Zahid, Tian-Li Wu, Denis Marcon, Puneet Srivastava, Marleen Van Hove, Stefaan Decoutere:
High temperature behaviour of GaN-on-Si high power MISHEMT devices. ESSDERC 2012: 302-305 - 2011
- [j1]Denis Marcon, Xuanwu Kang, John Viaene, Marleen Van Hove, Puneet Srivastava, Stefaan Decoutere, Robert Mertens, Gustaaf Borghs:
GaN-based HEMTs tested under high temperature storage test. Microelectron. Reliab. 51(9-11): 1717-1720 (2011)
Coauthor Index
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