"Gate Reliability of p-GaN Power HEMTs Under Pulsed Stress Condition."

M. Millesimo et al. (2022)

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DOI: 10.1109/IRPS48227.2022.9764592

access: closed

type: Conference or Workshop Paper

metadata version: 2024-10-06

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M. Millesimo, Benoit Bakeroot, Matteo Borga, Niels Posthuma, Stefaan Decoutere, Enrico Sangiorgi, Claudio Fiegna, Andrea Natale Tallarico:
Gate Reliability of p-GaN Power HEMTs Under Pulsed Stress Condition. IRPS 2022: 10

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