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Maximilian W. Feil

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Conference and Workshop Papers

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2024
[c4]
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  - conf/irps/GrasserFWRBWVWABGP24
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  - https://dblp.org/rec/conf/irps/GrasserFWRBWVWABGP24
Tibor Grasser, Maximilian W. Feil, Katja Waschneck, Hans Reisinger, Judith Berens, Dominic Waldhör, A. Vasilev, Michael Waltl, Thomas Aichinger, M. Bockstedte, Wolfgang Gustin, Gregor Pobegen:
A Recombination-Enhanced-Defect-Reaction-Based Model for the Gate Switching Instability in SiC MOSFETs. IRPS 2024: 3
2023
[c3]
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  - conf/irps/FeilWRBASRGG23
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Maximilian W. Feil, Katja Waschneck, Hans Reisinger, Judith Berens, Thomas Aichinger, Paul Salmen, Gerald Rescher, Wolfgang Gustin, Tibor Grasser:
Towards Understanding the Physics of Gate Switching Instability in Silicon Carbide MOSFETs. IRPS 2023: 1-10
2022
[c2]
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  - conf/irps/FeilRKAGG22
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Maximilian W. Feil, Hans Reisinger, André Kabakow, Thomas Aichinger, Wolfgang Gustin, Tibor Grasser:
Optical Emission Correlated to Bias Temperature Instability in SiC MOSFETs. IRPS 2022: 3
2021
[c1]
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  - conf/irps/SalmenFWRRA21
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Paul Salmen, Maximilian W. Feil, Katja Waschneck, Hans Reisinger, Gerald Rescher, Thomas Aichinger:
A new test procedure to realistically estimate end-of-life electrical parameter stability of SiC MOSFETs in switching operation. IRPS 2021: 1-7

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