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2020 – today
- 2024
[c4]Shivendra K. Rathaur
, Abhisek Dixit, Edward Yi Chang:
Investigation on Positive Bias-Induced Threshold Voltage Instability in GaN-on-Si D-mode Power MIS-HEMTs. DRC 2024: 1-2- 2023
- [j4]Muhammad Musoddiq Jaafar, Mohd Farhanulhakim Mohd Razip Wee, Hoang-Tan-Ngoc Nguyen, Le Trung Hieu, Rahul Rai, Ashish Kumar Sahoo, Chang Fu Dee, Edward Yi Chang, Burhanuddin Yeop Majlis, Clarence Augustine Th Tee:
Surface Acoustic Wave Propagation of GaN/Sapphire Integrated with a Gold Guiding Layer. Sensors 23(5): 2464 (2023) - [c3]Yan-Kui Liang, June-Yang Zheng, Yu-Lon Lin, Wei-Li Li, Yu-Cheng Lu, Dong-Ru Hsieh, Li-Chi Peng, Tsung-Te Chou, Chi-Chung Kei, Chun-Chieh Lu, Huai-Ying Huang, Yuan-Chieh Tseng, Tien-Sheng Chao, Edward Yi Chang, Chun-Hsiung Lin:
Aggressively Scaled Atomic Layer Deposited Amorphous InZnOx Thin Film Transistor Exhibiting Prominent Short Channel Characteristics (SS= 69 mV/dec.; DIBL = 27.8 mV/V) and High Gm(802 μS/μm at VDS = 2V). VLSI Technology and Circuits 2023: 1-2
2010 – 2019
- 2019
- [j3]Venkatesan Nagarajan, Kun-Ming Chen, Huan-Chung Wang, Sankalp Kumar Singh, Deepak Anandan, Yueh-Chin Lin, Edward Yi Chang:
A simple extraction method for parasitic series resistances in GaN HEMTs considering non-quasi-static effects. Microelectron. J. 87: 51-54 (2019) - 2018
- [j2]Tien Tung Luong, Yen-Teng Ho, Yuen Yee Wong, Shane Chang, Edward Yi Chang:
Phase separation-suppressed and strain-modulated improvement of crystalline quality of AlGaN epitaxial layer grown by MOCVD. Microelectron. Reliab. 83: 286-292 (2018) - [c2]Chih-Yi Yang, Tian-Li Wu, Tin-En Hsieh, Edward Yi Chang:
Investigation of degradation phenomena in GaN-on-Si power MIS-HEMTs under source current and drain bias stresses. IRPS 2018: 5-1 - 2017
- [c1]Edward Yi Chang, Quang-Ho Luc, Huy-Binh Do, Yueh-Chin Lin:
Performance improvement of InGaAs FinFET using NH3 treatment. ASICON 2017: 577-579
2000 – 2009
- 2009
- [j1]Kartika Chandra Sahoo, Yiming Li, Edward Yi Chang:
Numerical calculation of the reflectance of sub-wavelength structures on silicon nitride for solar cell application. Comput. Phys. Commun. 180(10): 1721-1729 (2009)
Coauthor Index
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