"Investigation of degradation phenomena in GaN-on-Si power MIS-HEMTs under ..."

Chih-Yi Yang et al. (2018)

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DOI: 10.1109/IRPS.2018.8353708

access: closed

type: Conference or Workshop Paper

metadata version: 2020-10-25

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Chih-Yi Yang, Tian-Li Wu, Tin-En Hsieh, Edward Yi Chang:
Investigation of degradation phenomena in GaN-on-Si power MIS-HEMTs under source current and drain bias stresses. IRPS 2018: 5-1

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