"Performance improvement of InGaAs FinFET using NH3 treatment."

Edward Yi Chang et al. (2017)

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DOI: 10.1109/ASICON.2017.8252541

access: closed

type: Conference or Workshop Paper

metadata version: 2022-10-02

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Edward Yi Chang, Quang-Ho Luc, Huy-Binh Do, Yueh-Chin Lin:
Performance improvement of InGaAs FinFET using NH3 treatment. ASICON 2017: 577-579

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