"Aggressively Scaled Atomic Layer Deposited Amorphous InZnOx Thin Film ..."

Yan-Kui Liang et al. (2023)

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DOI: 10.23919/VLSITECHNOLOGYANDCIR57934.2023.10185343

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type: Conference or Workshop Paper

metadata version: 2024-10-06

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Yan-Kui Liang, June-Yang Zheng, Yu-Lon Lin, Wei-Li Li, Yu-Cheng Lu, Dong-Ru Hsieh, Li-Chi Peng, Tsung-Te Chou, Chi-Chung Kei, Chun-Chieh Lu, Huai-Ying Huang, Yuan-Chieh Tseng, Tien-Sheng Chao, Edward Yi Chang, Chun-Hsiung Lin:
Aggressively Scaled Atomic Layer Deposited Amorphous InZnOx Thin Film Transistor Exhibiting Prominent Short Channel Characteristics (SS= 69 mV/dec.; DIBL = 27.8 mV/V) and High Gm(802 μS/μm at VDS = 2V). VLSI Technology and Circuits 2023: 1-2

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