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Journal Articles
- 2022
[j5]Yen-Cheng Chiu, Tung-Cheng Chang, Chun-Ying Lee, Je-Min Hung, Kuang-Tang Chang, Cheng-Xin Xue, Ssu-Yen Wu, Hui-Yao Kao, Peng Chen
, Hsiao-Yu Huang, Shih-Hsih Teng, Chieh-Pu Lo, Yi-Chun Shih, Yu-Der Chih, Tsung-Yung Jonathan Chang, Yier Jin, Meng-Fan Chang:
A 22-nm 1-Mb 1024-b Read Data-Protected STT-MRAM Macro With Near-Memory Shift-and-Rotate Functionality and 42.6-GB/s Read Bandwidth for Security-Aware Mobile Device. IEEE J. Solid State Circuits 57(6): 1936-1949 (2022)- 2021
- [j4]Chuan-Jia Jhang, Cheng-Xin Xue, Je-Min Hung, Fu-Chun Chang, Meng-Fan Chang:
Challenges and Trends of SRAM-Based Computing-In-Memory for AI Edge Devices. IEEE Trans. Circuits Syst. I Regul. Pap. 68(5): 1773-1786 (2021) - 2020
- [j3]Cheng-Xin Xue, Ting-Wei Chang, Tung-Cheng Chang, Hui-Yao Kao, Yen-Cheng Chiu, Chun-Ying Lee, Ya-Chin King, Chrong Jung Lin, Ren-Shuo Liu, Chih-Cheng Hsieh, Kea-Tiong Tang, Wei-Hao Chen, Meng-Fan Chang, Je-Syu Liu, Jia-Fang Li, Wei-Yu Lin, Wei-En Lin, Jing-Hong Wang, Wei-Chen Wei, Tsung-Yuan Huang:
Embedded 1-Mb ReRAM-Based Computing-in- Memory Macro With Multibit Input and Weight for CNN-Based AI Edge Processors. IEEE J. Solid State Circuits 55(1): 203-215 (2020) - 2019
- [j2]Bonan Yan, Bing Li, Ximing Qiao, Cheng-Xin Xue, Meng-Fan Chang, Yiran Chen, Hai Helen Li:
Resistive Memory-Based In-Memory Computing: From Device and Large-Scale Integration System Perspectives. Adv. Intell. Syst. 1(7): 1900068 (2019) - [j1]Cheng-Xin Xue, Wei-Cheng Zhao, Tzu-Hsien Yang, Yi-Ju Chen, Hiroyuki Yamauchi, Meng-Fan Chang:
A 28-nm 320-Kb TCAM Macro Using Split-Controlled Single-Load 14T Cell and Triple-Margin Voltage Sense Amplifier. IEEE J. Solid State Circuits 54(10): 2743-2753 (2019)
Conference and Workshop Papers
- 2024
- [c15]Ming-En Shih, Shih-Wei Hsieh, Ping-Yuan Tsai, Ming-Hung Lin, Pei-Kuei Tsung, En-Jui Chang, Jenwei Liang, Shu-Hsin Chang, Chung-Lun Huang, You-Yu Nian, Zhe Wan, Sushil Kumar, Cheng-Xin Xue, Gajanan Jedhe, Hidehiro Fujiwara, Haruki Mori, Chih-Wei Chen, Po-Hua Huang, Chih-Feng Juan, Chung-Yi Chen, Tsung-Yao Lin, Ch Wang, Chih-Cheng Chen, Kevin Jou:
20.1 NVE: A 3nm 23.2TOPS/W 12b-Digital-CIM-Based Neural Engine for High-Resolution Visual-Quality Enhancement on Smart Devices. ISSCC 2024: 360-362 - 2023
- [c14]Sung-En Hsieh, Chun-Hao Wei, Cheng-Xin Xue, Hung-Wei Lin, Wei-Hsuan Tu, En-Jui Chang, Kai-Taing Yang, Po-Heng Chen, Wei-Nan Liao, Li Lian Low, Chia-Da Lee, Allen-Cl Lu, Jenwei Liang, Chih-Chung Cheng, Tzung-Hung Kang:
A 70.85-86.27TOPS/W PVT-Insensitive 8b Word-Wise ACIM with Post-Processing Relaxation. ISSCC 2023: 136-137 - [c13]En-Jui Chang, Cheng-Xin Xue, Chetan Deshpande, Gajanan Jedhe, Jenwei Liang, Chih-Chung Cheng, Hung-Wei Lin, Chia-Da Lee, Sushil Kumar, Kim Soon Jway, Zijie Guo, Ritesh Garg, Allen-Cl Lu, Chien-Hung Lin, Meng-Han Hsieh, Tsung-Yao Lin, Chih-Cheng Chen:
A 12-nm 0.62-1.61 mW Ultra-Low Power Digital CIM-based Deep-Learning System for End-to-End Always-on Vision. VLSI Technology and Circuits 2023: 1-2 - [c12]Gajanan Jedhe, Chetan Deshpande, Sushil Kumar, Cheng-Xin Xue, Zijie Guo, Ritesh Garg, Kim Soon Jway, En-Jui Chang, Jenwei Liang, Zhe Wan, Zhenhao Pan:
A 12nm 137 TOPS/W Digital Compute-In-Memory using Foundry 8T SRAM Bitcell supporting 16 Kernel Weight Sets for AI Edge Applications. VLSI Technology and Circuits 2023: 1-2 - 2021
- [c11]Cheng-Xin Xue, Je-Min Hung, Hui-Yao Kao, Yen-Hsiang Huang, Sheng-Po Huang, Fu-Chun Chang, Peng Chen, Ta-Wei Liu, Chuan-Jia Jhang, Chin-I Su, Win-San Khwa, Chung-Chuan Lo, Ren-Shuo Liu, Chih-Cheng Hsieh, Kea-Tiong Tang, Yu-Der Chih, Tsung-Yung Jonathan Chang, Meng-Fan Chang:
A 22nm 4Mb 8b-Precision ReRAM Computing-in-Memory Macro with 11.91 to 195.7TOPS/W for Tiny AI Edge Devices. ISSCC 2021: 245-247 - 2020
- [c10]Jinn-Shyan Wang, Cheng-Xin Xue, Chien-Tung Liu, Tay-Jyi Lin:
A 0.21V 40nm NAND-ROM for IoT Sensing Systems with Long Standby Periods. ISCAS 2020: 1-4 - [c9]Tung-Cheng Chang, Yen-Cheng Chiu, Chun-Ying Lee, Je-Min Hung, Kuang-Tang Chang, Cheng-Xin Xue, Ssu-Yen Wu, Hui-Yao Kao, Peng Chen, Hsiao-Yu Huang, Shih-Hsih Teng, Meng-Fan Chang:
13.4 A 22nm 1Mb 1024b-Read and Near-Memory-Computing Dual-Mode STT-MRAM Macro with 42.6GB/s Read Bandwidth for Security-Aware Mobile Devices. ISSCC 2020: 224-226 - [c8]Cheng-Xin Xue, Tsung-Yuan Huang, Je-Syu Liu, Ting-Wei Chang, Hui-Yao Kao, Jing-Hong Wang, Ta-Wei Liu, Shih-Ying Wei, Sheng-Po Huang, Wei-Chen Wei, Yi-Ren Chen, Tzu-Hsiang Hsu, Yen-Kai Chen, Yun-Chen Lo, Tai-Hsing Wen, Chung-Chuan Lo, Ren-Shuo Liu, Chih-Cheng Hsieh, Kea-Tiong Tang, Meng-Fan Chang:
15.4 A 22nm 2Mb ReRAM Compute-in-Memory Macro with 121-28TOPS/W for Multibit MAC Computing for Tiny AI Edge Devices. ISSCC 2020: 244-246 - [c7]Qi Liu, Bin Gao, Peng Yao, Dong Wu, Junren Chen, Yachuan Pang, Wenqiang Zhang, Yan Liao, Cheng-Xin Xue, Wei-Hao Chen, Jianshi Tang, Yu Wang, Meng-Fan Chang, He Qian, Huaqiang Wu:
33.2 A Fully Integrated Analog ReRAM Based 78.4TOPS/W Compute-In-Memory Chip with Fully Parallel MAC Computing. ISSCC 2020: 500-502 - 2019
- [c6]Xin Si, He Qian, Meng-Fan Chang, Cheng-Xin Xue, Jian-Wei Su, Zhixiao Zhang, Sih-Han Li, Shyh-Shyuan Sheu, Heng-Yuan Lee, Ping-Cheng Chen, Huaqiang Wu:
Circuit Design Challenges in Computing-in-Memory for AI Edge Devices. ASICON 2019: 1-4 - [c5]Cheng-Xin Xue, Meng-Fan Chang:
Challenges in Circuit Designs of Nonvolatile-memory based computing-in-memory for AI Edge Devices. ISOCC 2019: 164-165 - [c4]Cheng-Xin Xue, Wei-Hao Chen, Je-Syu Liu, Jia-Fang Li, Wei-Yu Lin, Wei-En Lin, Jing-Hong Wang, Wei-Chen Wei, Ting-Wei Chang, Tung-Cheng Chang, Tsung-Yuan Huang, Hui-Yao Kao, Shih-Ying Wei, Yen-Cheng Chiu, Chun-Ying Lee, Chung-Chuan Lo, Ya-Chin King, Chorng-Jung Lin, Ren-Shuo Liu, Chih-Cheng Hsieh, Kea-Tiong Tang, Meng-Fan Chang:
A 1Mb Multibit ReRAM Computing-In-Memory Macro with 14.6ns Parallel MAC Computing Time for CNN Based AI Edge Processors. ISSCC 2019: 388-390 - [c3]Kea-Tiong Tang, Wei-Chen Wei, Zuo-Wei Yeh, Tzu-Hsiang Hsu, Yen-Cheng Chiu, Cheng-Xin Xue, Yu-Chun Kuo, Tai-Hsing Wen, Mon-Shu Ho, Chung-Chuan Lo, Ren-Shuo Liu, Chih-Cheng Hsieh, Meng-Fan Chang:
Considerations Of Integrating Computing-In-Memory And Processing-In-Sensor Into Convolutional Neural Network Accelerators For Low-Power Edge Devices. VLSI Circuits 2019: 166- - 2018
- [c2]Cheng-Xin Xue, Wei-Cheng Zhao, Tzu-Hsien Yang, Yi-Ju Chen, Hiroyuki Yamauchi, Meng-Fan Chang:
A 28mn 320Kb TCAM Macro with Sub-0.8ns Search Time and 3.5+x Improvement in Delay-Area-Energy Product using Split-Controlled Single-Load 14T Cell. A-SSCC 2018: 127-128 - [c1]Wei-Hao Chen, Kai-Xiang Li, Wei-Yu Lin, Kuo-Hsiang Hsu, Pin-Yi Li, Cheng-Han Yang, Cheng-Xin Xue, En-Yu Yang, Yen-Kai Chen, Yun-Sheng Chang, Tzu-Hsiang Hsu, Ya-Chin King, Chorng-Jung Lin, Ren-Shuo Liu, Chih-Cheng Hsieh, Kea-Tiong Tang, Meng-Fan Chang:
A 65nm 1Mb nonvolatile computing-in-memory ReRAM macro with sub-16ns multiply-and-accumulate for binary DNN AI edge processors. ISSCC 2018: 494-496
Coauthor Index
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