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ORCIDJesús Urresti-Ibañez
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2010 – 2019
- 2014
[j9]Jesús Urresti
, Salvador Hidalgo, David Flores, Daniel Fernández Hevia:
3.3 kV PT-IGBT with voltage-sensor monolithically integrated. IET Circuits Devices Syst. 8(3): 182-187 (2014)- [j8]Ihsan Supono, Jesús Urresti, Alberto Castellazzi, David Flores:
Overload robust IGBT design for SSCB application. Microelectron. Reliab. 54(9-10): 1906-1910 (2014) - 2012
- [j7]Ignasi Cortés, Xavier Perpiñà, Jesús Urresti, Xavier Jordà, José Rebollo:
Study of layout influence on ruggedness of NPT-IGBT devices by physical modelling. Microelectron. Reliab. 52(9-10): 2471-2476 (2012) - 2011
- [j6]Xavier Perpiñà, Jean-François Serviere, Jesús Urresti-Ibañez, Ignasi Cortés, Xavier Jordà, Salvador Hidalgo, José Rebollo, Michel Mermet-Guyennet:
Analysis of Clamped Inductive Turnoff Failure in Railway Traction IGBT Power Modules Under Overload Conditions. IEEE Trans. Ind. Electron. 58(7): 2706-2714 (2011)
2000 – 2009
- 2008
- [j5]X. Perpiñà, Jean-François Serviere, Xavier Jordà, A. Fauquet, Salvador Hidalgo, Jesús Urresti-Ibañez, José Rebollo, Michel Mermet-Guyennet:
IGBT module failure analysis in railway applications. Microelectron. Reliab. 48(8-9): 1427-1431 (2008) - 2007
- [j4]Jesús Urresti-Ibañez, Alberto Castellazzi, M. Piton, José Rebollo, Michel Mermet-Guyennet, Mauro Ciappa:
Robustness test and failure analysis of IGBT modules during turn-off. Microelectron. Reliab. 47(9-11): 1725-1729 (2007) - 2005
- [j3]Ignasi Cortés, Jaume Roig, David Flores, Jesús Urresti, Salvador Hidalgo, José Rebollo:
Analysis of hot-carrier degradation in a SOI LDMOS transistor with a steep retrograde drift doping profile. Microelectron. Reliab. 45(3-4): 493-498 (2005) - [j2]Jesús Urresti, Salvador Hidalgo, David Flores, Jaume Roig, Ignasi Cortés, José Rebollo:
Lateral punch-through TVS devices for on-chip protection in low-voltage applications. Microelectron. Reliab. 45(7-8): 1181-1186 (2005) - 2003
- [j1]Jesús Urresti, Salvador Hidalgo, David Flores, Jaume Roig, José Rebollo, I. Mazarredo:
Optimisation of very low voltage TVS protection devices. Microelectron. J. 34(9): 809-813 (2003)
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