"Analysis of hot-carrier degradation in a SOI LDMOS transistor with a steep ..."

Ignasi Cortés et al. (2005)

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DOI: 10.1016/J.MICROREL.2004.08.005

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type: Journal Article

metadata version: 2021-10-14

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Ignasi Cortés, Jaume Roig, David Flores, Jesús Urresti, Salvador Hidalgo, José Rebollo:
Analysis of hot-carrier degradation in a SOI LDMOS transistor with a steep retrograde drift doping profile. Microelectron. Reliab. 45(3-4): 493-498 (2005)

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