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Farzan Jazaeri
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2020 – today
- 2023
- [j2]Asif Wahid, Jacob Atkinson, Rajath Bindiganavile, Farzan Jazaeri, Armin Tajalli:
Noise-Aware FET Circuit Design Based on C/ID-Invariant. IEEE Trans. Circuits Syst. II Express Briefs 70(7): 2330-2334 (2023) - 2022
- [j1]Amin Rassekh, Majid Shalchian, Jean-Michel Sallese, Farzan Jazaeri:
Tunneling Current Through a Double Quantum Dots System. IEEE Access 10: 75245-75256 (2022) - [c13]Hung-Chi Han, Farzan Jazaeri, Antonio A. D'Amico, Zhixing Zhao, Steffen Lehmann, Claudia Kretzschmar, Edoardo Charbon, Christian C. Enz:
Cryogenic RF Characterization and Simple Modeling of a 22 nm FDSOI Technology. ESSDERC 2022: 269-272 - 2021
- [c12]Hung-Chi Han, Farzan Jazaeri, Antonio A. D'Amico, Andrea Baschirotto, Edoardo Charbon, Christian C. Enz:
Cryogenic Characterization of 16 nm FinFET Technology for Quantum Computing. ESSCIRC 2021: 71-74 - [c11]Hung-Chi Han, Farzan Jazaeri, Antonio A. D'Amico, Andrea Baschirotto, Edoardo Charbon, Christian C. Enz:
Cryogenic Characterization of 16 nm FinFET Technology for Quantum Computing. ESSDERC 2021: 71-74
2010 – 2019
- 2019
- [c10]Arnout Beckers, Farzan Jazaeri, Christian C. Enz:
Cryogenic MOSFET Threshold Voltage Model. ESSDERC 2019: 94-97 - [c9]Farzan Jazaeri, Arnout Beckers, Armin Tajalli, Jean-Michel Sallese:
A Review on Quantum Computing: From Qubits to Front-end Electronics and Cryogenic MOSFET Physics. MIXDES 2019: 15-25 - 2018
- [c8]Nikolaos Makris, Matthias Bucher, Farzan Jazaeri, Jean-Michel Sallese:
A Compact Model for Static and Dynamic Operation of Symmetric Double-Gate Junction FETs. ESSDERC 2018: 238-241 - 2017
- [c7]C.-M. Zhang, Farzan Jazaeri, Alessandro Pezzotta, Claudio Bruschini, Giulio Borghello, S. Mattiazzo, Andrea Baschirotto, Christian C. Enz:
Total ionizing dose effects on analog performance of 28 nm bulk MOSFETs. ESSDERC 2017: 30-33 - [c6]Arnout Beckers, Farzan Jazaeri, Andrea Ruffino, Claudio Bruschini, Andrea Baschirotto, Christian C. Enz:
Cryogenic characterization of 28 nm bulk CMOS technology for quantum computing. ESSDERC 2017: 62-65 - [c5]Ali Saeidi, Farzan Jazaeri, Francesco Bellando, Igor Stolichnov, Christian C. Enz, Adrian M. Ionescu:
Negative capacitance field effect transistors; capacitance matching and non-hysteretic operation. ESSDERC 2017: 78-81 - 2016
- [c4]Alessandro Pezzotta, C.-M. Zhang, Farzan Jazaeri, Claudio Bruschini, Giulio Borghello, Federico Faccio, S. Mattiazzo, Andrea Baschirotto, Christian C. Enz:
Impact of GigaRad Ionizing Dose on 28 nm bulk MOSFETs for future HL-LHC. ESSDERC 2016: 146-149 - 2015
- [c3]Wladek Grabinski, Daniel Tomaszewski, Farzan Jazaeri, Anurag Mangla, Jean-Michel Sallese, Maria-Anna Chalkiadaki, Antonios Bazigos, Matthias Bucher:
FOSS EKV 2.6 parameter extractor. MIXDES 2015: 181-186 - 2013
- [c2]Lucian Barbut, Farzan Jazaeri, Didier Bouvet, Jean-Michel Sallese:
Design space of twin gate junctionless vertical slit field effect transistors. MIXDES 2013: 393-396 - [c1]Lucian Barbut, Farzan Jazaeri, Didier Bouvet, Jean-Michel Sallese:
Heavily doped junctionless vertical slit FETs with slit width Below 20 nm. MIXDES 2013: 397-400
Coauthor Index
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