"Total ionizing dose effects on analog performance of 28 nm bulk MOSFETs."

C.-M. Zhang et al. (2017)

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DOI: 10.1109/ESSDERC.2017.8066584

access: closed

type: Conference or Workshop Paper

metadata version: 2020-10-25

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C.-M. Zhang, Farzan Jazaeri, Alessandro Pezzotta, Claudio Bruschini, Giulio Borghello, S. Mattiazzo, Andrea Baschirotto, Christian C. Enz:
Total ionizing dose effects on analog performance of 28 nm bulk MOSFETs. ESSDERC 2017: 30-33

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