"Impact of GigaRad Ionizing Dose on 28 nm bulk MOSFETs for future HL-LHC."

Alessandro Pezzotta et al. (2016)

> Home

Details and statistics

DOI: 10.1109/ESSDERC.2016.7599608

access: closed

type: Conference or Workshop Paper

metadata version: 2023-09-07

- view
  - electronic edition via DOI
  - unpaywalled version
  authority control:
- export record
  dblp key:
  - conf/essderc/PezzottaZJBBFMB16
- ask others
- share record
  persistent URL:
  - https://dblp.org/rec/conf/essderc/PezzottaZJBBFMB16
Alessandro Pezzotta, C.-M. Zhang, Farzan Jazaeri, Claudio Bruschini, Giulio Borghello, Federico Faccio, S. Mattiazzo, Andrea Baschirotto, Christian C. Enz:
Impact of GigaRad Ionizing Dose on 28 nm bulk MOSFETs for future HL-LHC. ESSDERC 2016: 146-149

manage site settings

To protect your privacy, all features that rely on external API calls from your browser are turned off by default. You need to opt-in for them to become active. All settings here will be stored as cookies with your web browser. For more information see our F.A.Q.