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ORCIDAl-Moatasem El-Sayed
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- affiliation: Technical University of Vienna, Austria
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Journal Articles
- 2018
[j1]Wolfgang Goes, Yannick Wimmer, Al-Moatasem El-Sayed
, Gerhard Rzepa, Markus Jech, Alexander L. Shluger, Tibor Grasser:
Identification of oxide defects in semiconductor devices: A systematic approach linking DFT to rate equations and experimental evidence. Microelectron. Reliab. 87: 286-320 (2018)
Conference and Workshop Papers
- 2022
- [c13]Christoph Wilhelmer, Dominic Waldhoer, Markus Jech, Al-Moatasem Bellah El-Sayed, Lukas Cvitkovich, Michael Waltl, Tibor Grasser:
Metastability of Negatively Charged Hydroxyl-E' Centers and their Potential Role in Positive Bias Temperature Instabilities. ESSDERC 2022: 376-379 - [c12]Dominic Waldhoer, Bibhas Manna, Al-Moatasem Bellah El-Sayed, Theresia Knobloch, Yury Illarionov, Tibor Grasser:
Silicon-Impurity Defects in Calcium Fluoride: A First Principles Study. ESSDERC 2022: 380-383 - [c11]Stanislav Tyaginov, Alexander Makarov, Al-Moatasem Bellah El-Sayed, Adrian Vaisman Chasin, Erik Bury, Markus Jech, Michiel Vandemaele, Alexander Grill, An De Keersgieter, Mikhail I. Vexler, Geert Eneman, Ben Kaczer:
Understanding and Modeling Opposite Impacts of Self-Heating on Hot-Carrier Degradation in n- and p-Channel Transistors. IRPS 2022: 6 - [c10]James Farmer, Dmitry Veksler, E. Tang, Gennadi Bersuker, David Z. Gao, Al-Moatasem El-Sayed, Thomas Durrant, Alexander L. Shluger, Thomas Rueckes, Lee Cleveland, Harry Luan, Rahul Sen:
Combining measurements and modeling/simulations analysis to assess carbon nanotube memory cell characteristics. IRPS 2022: 36-1 - 2021
- [c9]Lukas Cvitkovich, Markus Jech, Dominic Waldhör, Al-Moatasem El-Sayed, Christoph Wilhelmer, Tibor Grasser:
Multiscale Modeling Study of Native Oxide Growth on a Si(100) Surface. ESSDERC 2021: 235-238 - [c8]Diego Milardovich, Markus Jech, Dominic Waldhoer, Al-Moatasem Bellah El-Sayed, Tibor Grasser:
Machine Learning Prediction of Defect Structures in Amorphous Silicon Dioxide. ESSDERC 2021: 239-242 - [c7]Christoph Wilhelmer, Markus Jech, Dominic Waldhoer, Al-Moatasem Bellah El-Sayed, Lukas Cvitkovich, Tibor Grasser:
Statistical Ab Initio Analysis of Electron Trapping Oxide Defects in the Si/SiO2 Network. ESSDERC 2021: 243-246 - [c6]James Farmer, William Whitehead, Andrew Hall, Dmitry Veksler, Gennadi Bersuker, David Z. Gao, Al-Moatasem El-Sayed, Thomas Durrant, Alexander L. Shluger, Thomas Rueckes, Lee Cleveland, Harry Luan, Rahul Sen:
Mitigating switching variability in carbon nanotube memristors. IRPS 2021: 1-4 - 2020
- [c5]Viktor Sverdlov, Al-Moatasem Bellah El-Sayed, Siegfried Selberherr:
Subband Structure and Ballistic Conductance of a Molybdenum Disulfide Nanoribbon in Topological 1T' Phase: A k·p Study. MIXDES 2020: 168-171 - 2019
- [c4]Alexander Makarov, Dimitri Linten, Stanislav Tyaginov, Ben Kaczer, Philippe Roussel, Adrian Vaisman Chasin, Michiel Vandemaele, Geert Hellings, Al-Moatasem El-Sayed, Markus Jech, Tibor Grasser:
Stochastic Modeling of Hot-Carrier Degradation in nFinFETs Considering the Impact of Random Traps and Random Dopants. ESSDERC 2019: 262-265 - [c3]Alexander Makarov, Ben Kaczer, Philippe Roussel, Adrian Vaisman Chasin, Alexander Grill, Michiel Vandemaele, Geert Hellings, Al-Moatasem El-Sayed, Tibor Grasser, Dimitri Linten, Stanislav Tyaginov:
Modeling the Effect of Random Dopants on Hot-Carrier Degradation in FinFETs. IRPS 2019: 1-7 - 2018
- [c2]David Z. Gao, Jack Strand, Al-Moatasem El-Sayed, Alexander L. Shluger, Andrea Padovani, Luca Larcher:
Role of electron and hole trapping in the degradation and breakdown of SiO2 and HfO2 films. IRPS 2018: 5 - 2015
- [c1]Tibor Grasser, M. Wahl, Wolfgang Goes, Yannick Wimmer, Al-Moatasem El-Sayed, Alexander L. Shluger, Ben Kaczer:
On the volatility of oxide defects: Activation, deactivation, and transformation. IRPS 2015: 5
Coauthor Index
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