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Hyun-Chul Sagong
Person information
- affiliation: Samsung, South Korea
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Journal Articles
- 2024
- [j4]Minji Bang, Jonghyeon Ha, Minki Suh, Dabok Lee, Minsang Ryu, Jin-Woo Han, Hyunchul Sagong, Hojoon Lee, Jungsik Kim:
Mitigation of Single Event Upset Effects in Nanosheet FET 6T SRAM Cell. IEEE Access 12: 130347-130355 (2024) - [j3]Minki Suh, Minsang Ryu, Jonghyeon Ha, Minji Bang, Dabok Lee, Hojoon Lee, Hyunchul Sagong, Jungsik Kim:
Comprehensive Hammering and Parasitic BJT Effects in Vertically Stacked DRAM. IEEE Access 12: 155119-155124 (2024) - [j2]Hyunchul Sagong, Seongcheol Jeong, Hojoon Lee:
Analysis of Failure Mechanism and Reliability Enhancement of Silicon Strain Gauge-Based Pressure Sensor for Automotive Applications. Sensors 24(3): 975 (2024) - 2023
- [j1]Sanghoon Lee, Dabin Yang, Sanghak Lee, Hyunchul Sagong, Jongsoo Lee:
Prediction of Internal Temperature of Starter Solenoid Via PoF-Based Fault Reproduction Experiment. IEEE Trans. Instrum. Meas. 72: 1-13 (2023)
Conference and Workshop Papers
- 2021
- [c10]Hai Jiang, Jinju Kim, Kihyun Choi, Hyewon Shim, Hyunchul Sagong, Junekyun Park, Hwasung Rhee, Euncheol Lee:
Time Dependent Variability in Advanced FinFET Technology for End-of-Lifetime Reliability Prediction. IRPS 2021: 1-6 - [c9]Rakesh Ranjan, Ki-Don Lee, Md Iqbal Mahmud, Mohammad Shahriar Rahman, Pavitra Ramadevi Perepa, Charles Briscoe LaRow, Caleb Dongkyun Kwon, Maihan Nguyen, Minhyo Kang, Ashish Kumar Jha, Ahmed Shariq, Shamas Musthafa Ummer, Susannah Laure Prater, Hyunchul Sagong, HwaSung Rhee:
Systematic Study of Process Impact on FinFET Reliability. IRPS 2021: 1-5 - 2020
- [c8]Hai Jiang, Hyun-Chul Sagong, Jinju Kim, Hyewon Shim, Yoohwan Kim, Junekyun Park, Taiki Uemura, Yongsung Ji, Taeyoung Jeong, Dongkyun Kwon, Hwasung Rhee, Sangwoo Pae, Brandon Lee:
Advanced Self-heating Model and Methodology for Layout Proximity Effect in FinFET Technology. IRPS 2020: 1-5 - [c7]Rakesh Ranjan, Charles B. LaRow, Ki-Don Lee, Minhyo Kang, Pavitra R. Perepa, Md. Shahriar Rahman, Bong Ki Lee, David Moreau, Carolyn Cariss-Daniels, Timothy Basford, Colby Callahan, Maihan Nguyen, Gil Heyun Choi, Hyunchul Sagong, HwaSung Rhee:
Trap Density Modulation for IO FinFET NBTI Improvement. IRPS 2020: 1-5 - 2019
- [c6]Hai Jiang, Hyun-Chul Sagong, Jinju Kim, Junekyun Park, Sangchul Shin, Sangwoo Pae:
Localized Layout Effect Related Reliability Approach in 8nm FinFETs Technology: From Transistor to Circuit. IRPS 2019: 1-5 - 2018
- [c5]Taiki Uemura, Soonyoung Lee, Dahye Min, Ihlhwa Moon, Jungman Lim, Seungbae Lee, Hyun-Chul Sagong, Sangwoo Pae:
Investigation of alpha-induced single event transient (SET) in 10 nm FinFET logic circuit. IRPS 2018: 1 - [c4]Younggeun Ji, Jeonghoon Kim, Jungin Kim, Miji Lee, Jaeheon Noh, Taeyoung Jeong, Juhyeon Shin, Junho Kim, Young Heo, Ung Cho, Hyun-Chul Sagong, Junekyun Park, Yeonsik Choo, Gilhwan Do, Hoyoung Kang, Eunkyeong Choi, Dongyoon Sun, Changki Kang, Sangchul Shin, Sangwoo Pae:
Reliability characterization of advanced CMOS image sensor (CIS) with 3D stack and in-pixel DTI. IRPS 2018: 3 - [c3]Hyunjin Kim, Minjung Jin, Hyun-Chul Sagong, Jinju Kim, Ukjin Jung, Minhyuck Choi, Junekyun Park, Sangchul Shin, Sangwoo Pae:
A systematic study of gate dielectric TDDB in FinFET technology. IRPS 2018: 4 - [c2]Hyun-Chul Sagong, Hyunjin Kim, Seungjin Choo, Sungyoung Yoon, Hyewon Shim, Sangsu Ha, Tae-Young Jeong, Minhyeok Choe, Junekyun Park, Sangchul Shin, Sangwoo Pae:
Effects of Far-BEOL anneal on the WLR and product reliability characterization of FinFET process technology. IRPS 2018: 6 - 2015
- [c1]Changze Liu, Hyun-Chul Sagong, Hyejin Kim, Seungjin Choo, Hyunwoo Lee, Yoohwan Kim, Hyunjin Kim, Bisung Jo, Minjung Jin, Jinjoo Kim, Sangsu Ha, Sangwoo Pae, Jongwoo Park:
Systematical study of 14nm FinFET reliability: From device level stress to product HTOL. IRPS 2015: 2
Coauthor Index
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