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Gang-Jun Kim
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2020 – today
- 2024
- [j8]Jun Hui Park, Jung Nam Kim
, Seonhaeng Lee, Gang-Jun Kim, Namhyun Lee, Rock-Hyun Baek
, Dae Hwan Kim
, Changhyun Kim
, Myounggon Kang
, Yoon Kim
:
Current-Voltage Modeling of DRAM Cell Transistor Using Genetic Algorithm and Deep Learning. IEEE Access 12: 23881-23886 (2024) - 2021
- [c2]Gang-Jun Kim, Moonjee Yoon, SungHwan Kim, Myeongkyu Eo, Shinhyung Kim, Taehun You, Namhyun Lee, Kijin Kim, Sangwoo Pae:
The Characterization of Degradation on various SiON pMOSFET transistors under AC/DC NBTI stress. IRPS 2021: 1-4 - [c1]Donghee Son, Gang-Jun Kim, Jongkyun Kim, Nam-Hyun Lee, Kijin Kim, Sangwoo Pae:
Effect of High Temperature on Recovery of Hot Carrier Degradation of scaled nMOSFETs in DRAM. IRPS 2021: 1-4
2010 – 2019
- 2018
- [j7]Gang-Jun Kim, Nam-Hyun Lee, Jongkyun Kim, Jung Eun Seok, Yunsung Lee:
Effect of DC/AC stress on the reliability of cell capacitor in DRAM. Microelectron. Reliab. 88-90: 179-182 (2018) - [j6]Jongkyun Kim, Namhyun Lee, Gang-Jun Kim, Young-Yun Lee, Jung-Eun Seok, Yunsung Lee:
Effect of OFF-state stress on reliability of nMOSFET in SWD circuits of DRAM. Microelectron. Reliab. 88-90: 183-185 (2018) - [j5]Yeohyeok Yun, Gang-Jun Kim, Ji-Hoon Seo, Donghee Son, Bongkoo Kang:
Method to extract parameters of power law for nano-scale SiON pMOSFETs under negative bias temperature instability. Microelectron. Reliab. 88-90: 191-195 (2018) - 2016
- [j4]Donghee Son, Gang-Jun Kim, Ji-Hoon Seo, Nam-Hyun Lee, YongHa Kang, Bongkoo Kang:
Degradation of pMOSFETs due to hot electron induced punchthrough. Microelectron. Reliab. 59: 13-17 (2016) - [j3]Donghee Son, Gang-Jun Kim, Ji-Hoon Seo, Nam-Hyun Lee, YongHa Kang, Bongkoo Kang:
Channel width dependence of AC stress on bulk nMOSFETs. Microelectron. Reliab. 64: 194-198 (2016) - 2013
- [j2]Seonhaeng Lee, Cheolgyu Kim, Hyeokjin Kim, Gang-Jun Kim, Ji-Hoon Seo, Donghee Son, Bongkoo Kang:
Effect of negative bias temperature instability induced by a low stress voltage on nanoscale high-k/metal gate pMOSFETs. Microelectron. Reliab. 53(9-11): 1351-1354 (2013) - 2012
- [j1]Seonhaeng Lee, Dongwoo Kim
, Cheolgyu Kim, N.-H. Lee, Gang-Jun Kim, Chiho Lee, Jeongsoo Park, Bongkoo Kang:
Effect of electron-electron scattering at an elevated temperature on device lifetime of nanoscale nMOSFETs. Microelectron. Reliab. 52(9-10): 1905-1908 (2012)
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