"Effect of OFF-state stress on reliability of nMOSFET in SWD circuits of DRAM."

Jongkyun Kim et al. (2018)

> Home

Details and statistics

DOI: 10.1016/J.MICROREL.2018.06.101

access: closed

type: Journal Article

metadata version: 2020-02-22

- view
  - electronic edition via DOI
  - unpaywalled version
  authority control:
- export record
  dblp key:
  - journals/mr/KimLKLSL18
- ask others
- share record
  persistent URL:
  - https://dblp.org/rec/journals/mr/KimLKLSL18
Jongkyun Kim, Namhyun Lee, Gang-Jun Kim, Young-Yun Lee, Jung-Eun Seok, Yunsung Lee:
Effect of OFF-state stress on reliability of nMOSFET in SWD circuits of DRAM. Microelectron. Reliab. 88-90: 183-185 (2018)

manage site settings

To protect your privacy, all features that rely on external API calls from your browser are turned off by default. You need to opt-in for them to become active. All settings here will be stored as cookies with your web browser. For more information see our F.A.Q.