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ORCIDAbdelmadjid Benabdelmoumene
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2020 – today
- 2020
[j4]Amel Chenouf
, Boualem Djezzar, Hamid Bentarzi, Abdelmadjid Benabdelmoumene:
Sizing of the CMOS 6T-SRAM cell for NBTI ageing mitigation. IET Circuits Devices Syst. 14(4): 555-561 (2020)
2010 – 2019
- 2014
- [j3]Cherifa Tahanout, Hakim Tahi, Boualem Djezzar, Abdelmadjid Benabdelmoumene, Mohamed Goudjil, Bécharia Nadji:
An Accurate Combination of on-the-fly Interface Trap and Threshold Voltage Methods for NBTI Degradation Extraction. J. Electron. Test. 30(4): 415-423 (2014) - [j2]Hakim Tahi, Boualem Djezzar, Abdelmadjid Benabdelmoumene, Amel Chenouf, Mohamed Goudjil:
Investigation of interface, shallow and deep oxide traps under NBTI stress using charge pumping technique. Microelectron. Reliab. 54(5): 882-888 (2014) - [c4]Abdelmadjid Benabdelmoumene, Boualem Djezzar, Hakim Tahi, Amel Chenouf, Mohamed Goudjil, Rafik Serhane, Fayçal Hadj Larbi, Mohamed Kechouane:
Does NBTI effect in MOS transistors depend on channel length? ICM 2014: 52-55 - [c3]Amel Chenouf, Boualem Djezzar, Abdelmadjid Benabdelmoumene, Hakim Tahi, Mohamed Goudjil:
Reliability analysis of CMOS inverter subjected to AC & DC NBTI stresses. IDT 2014: 142-146 - [c2]Mohamed Boubaaya, Hakim Tahi, Boualem Djezzar, Karim Benmassai, Abdelmadjid Benabdelmoumene, Mohamed Goudjil, Djamila Doumaz, Abdelhak Feraht Hemida:
Reaction-diffusion model for interface traps induced by BTS stress including H+, H and H2 as diffusion species. IDT 2014: 231-235 - [c1]Hakim Tahi, Boualem Djezzar, Karim Benmassai, Mohamed Boubaaya, Abdelmadjid Benabdelmoumene, Amel Chenouf, Mohamed Goudjil:
Investigation of defect microstructures responsible for NBTI degradation using effective dipole moment extraction. IDT 2014: 236-241 - 2013
- [j1]Hakim Tahi, Boualem Djezzar, Abdelmadjid Benabdelmoumene:
A new procedure for eliminating the geometric component from charge pumping: Application for NBTI and radiation issues. Microelectron. Reliab. 53(4): 513-519 (2013)
Coauthor Index
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