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ORCIDSadayuki Morita
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2010 – 2019
- 2013
[c4]Takao Nomura, Ryo Mori, Munehiro Ito, Koji Takayanagi, Toshihiko Ochiai, Kazuki Fukuoka, Kazuo Otsuga, Koji Nii, Sadayuki Morita, Tomoaki Hashimoto, Tsuyoshi Kida, Junichi Yamada, Hideki Tanaka:
Testability improvement for 12.8 GB/s Wide IO DRAM controller by small area pre-bonding TSV tests and a 1 GHz sampled fully digital noise monitor. CICC 2013: 1-4- 2012
- [c3]Kazuki Fukuoka, Ryo Mori, A. Kato, Motoshige Igarashi, Koji Shibutani, T. Yamaki, Shinji Tanaka, Koji Nii, Sadayuki Morita, Takao Koike, Noriaki Sakamoto:
A 123μW standby power technique with EM-tolerant 1.8V I/O NMOS power switch in 28nm HKMG technology. CICC 2012: 1-4 - [c2]Kazuo Otsuga, Masafumi Onouchi, Yasuto Igarashi, Toyohito Ikeya, Sadayuki Morita, Koichiro Ishibashi, Kazumasa Yanagisawa:
An on-chip 250 mA 40 nm CMOS digital LDO using dynamic sampling clock frequency scaling with offset-free TDC-based voltage sensor. SoCC 2012: 11-14 - 2011
- [c1]Masafumi Onouchi, Kazuo Otsuga, Yasuto Igarashi, Toyohito Ikeya, Sadayuki Morita, Koichiro Ishibashi, Kazumasa Yanagisawa:
A 1.39-V input fast-transient-response digital LDO composed of low-voltage MOS transistors in 40-nm CMOS process. A-SSCC 2011: 37-40
2000 – 2009
- 2005
- [j2]Akira Kotabe, Kenichi Osada, Naoki Kitai, Mio Fujioka, Shiro Kamohara, Masahiro Moniwa, Sadayuki Morita, Yoshikazu Saitoh:
A low-power four-transistor SRAM cell with a stacked vertical poly-silicon PMOS and a dual-word-voltage scheme. IEEE J. Solid State Circuits 40(4): 870-876 (2005)
1990 – 1999
- 1994
- [j1]Koichiro Ishibashi, Kunihiro Komiyaji, Sadayuki Morita, Toshiro Aoto, Shuji Ikeda, Kyoichiro Asayama, Atsuyosi Koike, Toshiaki Yamanaka, Naotaka Hashimoto, Haruhito Iida, Fumio Kojima, Koichi Motohashi, Katsuro Sasaki:
A 12.5-ns 16-Mb CMOS SRAM with common-centroid-geometry-layout sense amplifiers. IEEE J. Solid State Circuits 29(4): 411-418 (1994)
Coauthor Index
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