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ORCIDKazuo Otsuga
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2010 – 2019
- 2013
[c3]Takao Nomura, Ryo Mori, Munehiro Ito, Koji Takayanagi, Toshihiko Ochiai, Kazuki Fukuoka, Kazuo Otsuga, Koji Nii, Sadayuki Morita, Tomoaki Hashimoto, Tsuyoshi Kida, Junichi Yamada, Hideki Tanaka:
Testability improvement for 12.8 GB/s Wide IO DRAM controller by small area pre-bonding TSV tests and a 1 GHz sampled fully digital noise monitor. CICC 2013: 1-4- 2012
- [c2]Kazuo Otsuga, Masafumi Onouchi, Yasuto Igarashi, Toyohito Ikeya, Sadayuki Morita, Koichiro Ishibashi, Kazumasa Yanagisawa:
An on-chip 250 mA 40 nm CMOS digital LDO using dynamic sampling clock frequency scaling with offset-free TDC-based voltage sensor. SoCC 2012: 11-14 - 2011
- [c1]Masafumi Onouchi, Kazuo Otsuga, Yasuto Igarashi, Toyohito Ikeya, Sadayuki Morita, Koichiro Ishibashi, Kazumasa Yanagisawa:
A 1.39-V input fast-transient-response digital LDO composed of low-voltage MOS transistors in 40-nm CMOS process. A-SSCC 2011: 37-40
2000 – 2009
- 2008
- [j5]Shinya Kajiyama, Ken'ichiro Sonoda, Kazuo Otsuga, Hideaki Kurata, Kiyoshi Ishikawa:
A Design of Constant-Charge-Injection Programming Scheme for AG-AND Flash Memories Using Array-Level Analytical Model. IEICE Trans. Electron. 91-C(4): 526-533 (2008) - 2007
- [j4]Kazuo Otsuga, Hideaki Kurata, Satoshi Noda, Yoshitaka Sasago, Tsuyoshi Arigane, Tetsufumi Kawamura, Takashi Kobayashi:
Selective-Capacitance Constant-Charge-Injection Programming Scheme for High-Speed Multilevel AG-AND Flash Memories. IEICE Trans. Electron. 90-C(4): 772-778 (2007) - [j3]Hideaki Kurata, Satoshi Noda, Yoshitaka Sasago, Kazuo Otsuga, Tsuyoshi Arigane, Tetsufumi Kawamura, Takashi Kobayashi, Hitoshi Kume, Kazuki Homma, Teruhiko Ito, Yoshinori Sakamoto, Masahiro Shimizu, Yoshinori Ikeda, Osamu Tsuchiya, Kazunori Furusawa:
A 126 mm2 4-Gb Multilevel AG-AND Flash Memory with Inversion-Layer-Bit-Line Technology. IEICE Trans. Electron. 90-C(11): 2146-2156 (2007) - [j2]Hideaki Kurata, Kazuo Otsuga, Akira Kotabe, Shinya Kajiyama, Taro Osabe, Yoshitaka Sasago, Shunichi Narumi, Kenji Tokami, Shiro Kamohara, Osamu Tsuchiya:
Random Telegraph Signal in Flash Memory: Its Impact on Scaling of Multilevel Flash Memory Beyond the 90-nm Node. IEEE J. Solid State Circuits 42(6): 1362-1369 (2007) - 2005
- [j1]Hideaki Kurata, Shunichi Saeki, Takashi Kobayashi, Yoshitaka Sasago, Tsuyoshi Arigane, Kazuo Otsuga, Takayuki Kawahara
:
Constant-charge-injection programming: a novel high-speed programming method for multilevel flash memories. IEEE J. Solid State Circuits 40(2): 523-531 (2005)
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