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2010 – 2019
- 2019
[c5]Anaïs Cassou, Patrick Tounsi, Jean-Pierre Fradin:
Using Compact Thermal Modelling for the Investigation of a Cooling System Dysfunction Applied to a Power Module with Double Sided Cooling. MIXDES 2019: 287-290- [c4]Quang Chuc Nguyen, Patrick Tounsi, Jean-Pierre Fradin, Jean-Michel Reynes:
Development of SiC MOSFET Electrical Model and Experimental Validation: Improvement and Reduction of Parameter Number. MIXDES 2019: 298-301 - [c3]Nabil El Belghiti Alaoui, Patrick Tounsi, Alexandre Boyer, Arnaud Viard:
Detecting PCB Assembly Defects Using Infrared Thermal Signatures. MIXDES 2019: 345-349 - 2018
- [j11]Nabil El Belghiti Alaoui, Alexandre Boyer, Patrick Tounsi, Arnaud Viard:
Upgrading In-Circuit Test of High Density PCBAs Using Electromagnetic Measurement and Principal Component Analysis. J. Electron. Test. 34(6): 749-762 (2018) - [j10]Nabil El Belghiti Alaoui, Alexandre Boyer, Patrick Tounsi, Arnaud Viard:
New defect detection approach using near electromagnetic field probing of high density PCBAs. Microelectron. Reliab. 88-90: 288-293 (2018) - [c2]Nabil El Belghiti Alaoui, Patrick Tounsi, Alexandre Boyer, Arnaud Viard:
New testing approach using near electromagnetic field probing intending to upgrade in-circuit testing of high density PCBAs. NATW 2018: 1-8 - 2013
- [j9]Toufik Azoui, Patrick Tounsi, Jean-Marie Dorkel, Jean-Michel Reynes, Jean-Luc Massol, E. Pomes:
Estimation of power MOSFET junction temperature during avalanche mode: Experimental tests and modelling. Microelectron. Reliab. 53(9-11): 1750-1754 (2013) - [c1]Emmanuel Marcault, Jean-Luc Massol, Patrick Tounsi, Jean-Marie Dorkel:
Distributed electrothermal modeling methodology for MOS gated power devices simulations. MIXDES 2013: 301-305 - 2012
- [j8]Toufik Azoui, Patrick Tounsi, Jean-Marie Dorkel:
Innovative methodology to extract dynamic compact thermal models: Application to power devices. Microelectron. J. 43(9): 642-648 (2012) - [j7]Emmanuel Marcault
, Marie Breil, A. Bourennane, Patrick Tounsi, Jean-Marie Dorkel:
Study of mechanical stress impact on the I-V characteristics of a power VDMOS device using 2D FEM simulations. Microelectron. Reliab. 52(3): 489-496 (2012) - 2011
- [j6]Toufik Azoui, Patrick Tounsi, Philippe Dupuy, L. Guillot, Jean-Marie Dorkel:
3D Electro-thermal modelling of bonding and metallization ageing effects for reliability improvement of power MOSFETs. Microelectron. Reliab. 51(9-11): 1943-1947 (2011)
2000 – 2009
- 2008
- [j5]Jean-Luc Fock Sui Too, B. Chauchat, Patrick Austin, Patrick Tounsi, Michel Mermet-Guyennet, Régis Meuret:
Performance and reliability testing of modern IGBT devices under typical operating conditions of aeronautic applications. Microelectron. Reliab. 48(8-9): 1453-1458 (2008) - [j4]Jean-Baptiste Sauveplane, Patrick Tounsi, Emmanuel Scheid, A. Deram:
3D electro-thermal investigations for reliability of ultra low ON state resistance power MOSFET. Microelectron. Reliab. 48(8-9): 1464-1467 (2008) - 2007
- [j3]B. Khong, Marc Legros, Patrick Tounsi, Philippe Dupuy, X. Chauffleur, Colette Levade, G. Vanderschaeve, Emmanuel Scheid:
Characterization and modelling of ageing failures on power MOSFET devices. Microelectron. Reliab. 47(9-11): 1735-1740 (2007) - 2005
- [j2]B. Khong, Patrick Tounsi, Philippe Dupuy, X. Chauffleur, Marc Legros, A. Deram, Colette Levade, G. Vanderschaeve, Jean-Marie Dorkel, Jean-Pierre Fradin:
Innovative Methodology for Predictive Reliability of Intelligent Power Devices Using Extreme Electro-thermal Fatigue. Microelectron. Reliab. 45(9-11): 1717-1722 (2005) - 2002
- [j1]Oliver Perat, Jean-Marie Dorkel, Emmanuel Scheid, Pierre Temple-Boyer, Y. S. Chung, A. Peyre-Lavigne, M. Zecri, Patrick Tounsi:
Characterization method of thermomechanical parameters for microelectronic materials. Microelectron. Reliab. 42(7): 1053-1058 (2002)
Coauthor Index
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