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Heiner Ryssel
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2010 – 2019
- 2013
- [j11]Zahir Ouennoughi, C. Strenger, F. Bourouba, V. Haeublein, Heiner Ryssel, Lothar Frey:
Conduction mechanisms in thermal nitride and dry gate oxides grown on 4H-SiC. Microelectron. Reliab. 53(12): 1841-1847 (2013) - 2011
- [j10]Martin Le-Huu, Holger Schmitt, Stefan Noll, Michael Grieb, Frederik F. Schrey, Anton J. Bauer, Lothar Frey, Heiner Ryssel:
Investigation of the reliability of 4H-SiC MOS devices for high temperature applications. Microelectron. Reliab. 51(8): 1346-1350 (2011)
2000 – 2009
- 2007
- [j9]Mathias Rommel, Anton J. Bauer, Heiner Ryssel:
Quantitative oxide charge determination by photocurrent analysis. Microelectron. Reliab. 47(4-5): 673-677 (2007) - 2005
- [j8]Martin Lemberger, Albena Paskaleva, Stefan Zürcher, Anton J. Bauer, Lothar Frey, Heiner Ryssel:
Electrical properties of hafnium silicate films obtained from a single-source MOCVD precursor. Microelectron. Reliab. 45(5-6): 819-822 (2005) - 2003
- [j7]Albena Paskaleva, Martin Lemberger, Stefan Zürcher, Anton J. Bauer, Lothar Frey, Heiner Ryssel:
Electrical characterization of zirconium silicate films obtained from novel MOCVD precursors. Microelectron. Reliab. 43(8): 1253-1257 (2003) - 2001
- [j6]Michael P. M. Jank, Martin Lemberger, Anton J. Bauer, Lothar Frey, Heiner Ryssel:
Electrical reliability aspects of through the gate implanted MOS structures with thin oxides. Microelectron. Reliab. 41(7): 987-990 (2001) - [j5]S. Strobel, Anton J. Bauer, Matthias Beichele, Heiner Ryssel:
Suppression of boron penetration through thin gate oxides by nitrogen implantation into the gate electrode in PMOS devices. Microelectron. Reliab. 41(7): 1085-1088 (2001) - [j4]Matthias Beichele, Anton J. Bauer, Heiner Ryssel:
Reliability of ultrathin nitrided oxides grown in low pressure N2O ambient. Microelectron. Reliab. 41(7): 1089-1092 (2001)
1990 – 1999
- 1998
- [j3]Walter Bohmayr, Alexander Burenkov, Jürgen Lorenz, Heiner Ryssel, Siegfried Selberherr:
Monte Carlo simulation of silicon amorphization during ion implantation. IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. 17(12): 1236-1243 (1998) - 1990
- [j2]Peter Pichler, Heiner Ryssel:
Simulation of silicon semiconductor processing. Eur. Trans. Telecommun. 1(3): 293-299 (1990)
1980 – 1989
- 1985
- [j1]Jürgen Lorenz, Joachim Pelka, Heiner Ryssel, Albert Sachs, Albert Seidl, Milos Svoboda:
COMPOSITE -- A Complete Modeling Program of Silicon Technology. IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. 4(4): 421-430 (1985)
Coauthor Index
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