"Conduction mechanisms in thermal nitride and dry gate oxides grown on 4H-SiC."

Zahir Ouennoughi et al. (2013)

> Home

Details and statistics

DOI: 10.1016/J.MICROREL.2013.06.009

access: closed

type: Journal Article

metadata version: 2023-11-13

- view
  - electronic edition via DOI
  - unpaywalled version
  authority control:
- export record
  dblp key:
  - journals/mr/OuennoughiSBHRF13
- ask others
- share record
  persistent URL:
  - https://dblp.org/rec/journals/mr/OuennoughiSBHRF13
Zahir Ouennoughi, C. Strenger, F. Bourouba, V. Haeublein, Heiner Ryssel, Lothar Frey:
Conduction mechanisms in thermal nitride and dry gate oxides grown on 4H-SiC. Microelectron. Reliab. 53(12): 1841-1847 (2013)

manage site settings

To protect your privacy, all features that rely on external API calls from your browser are turned off by default. You need to opt-in for them to become active. All settings here will be stored as cookies with your web browser. For more information see our F.A.Q.