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2020 – today
- 2021
[j3]Tsung-Yung Jonathan Chang, Yen-Huei Chen
, Wei-Min Chan, Hank Cheng, Po-Sheng Wang, Yangsyu Lin, Hidehiro Fujiwara, Robin Lee, Hung-Jen Liao, Ping-Wei Wang, Geoffrey Yeap, Quincy Li:
A 5-nm 135-Mb SRAM in EUV and High-Mobility Channel FinFET Technology With Metal Coupling and Charge-Sharing Write-Assist Circuitry Schemes for High-Density and Low-VMIN Applications. IEEE J. Solid State Circuits 56(1): 179-187 (2021)
2010 – 2019
- 2017
- [c4]Jonathan Chang, Yen-Huei Chen, Wei-Min Chan, Sahil Preet Singh, Hank Cheng, Hidehiro Fujiwara, Jih-Yu Lin, Kao-Cheng Lin, John Hung, Robin Lee, Hung-Jen Liao, Jhon-Jhy Liaw, Quincy Li, Chih-Yung Lin, Mu-Chi Chiang, Shien-Yang Wu:
12.1 A 7nm 256Mb SRAM in high-k metal-gate FinFET technology with write-assist circuitry for low-VMIN applications. ISSCC 2017: 206-207 - 2016
- [c3]Yen-Huei Chen, Kao-Cheng Lin, Ching-Wei Wu, Wei-Min Chan, Jhon-Jhy Liaw, Hung-Jen Liao, Jonathan Chang:
A 16nm dual-port SRAM with partial suppressed word-line, dummy read recovery and negative bit-line circuitries for low VMIN applications. VLSI Circuits 2016: 1-2 - 2015
- [j2]Yen-Huei Chen, Wei-Min Chan, Wei-Cheng Wu, Hung-Jen Liao, Kuo-Hua Pan, Jhon-Jhy Liaw, Tang-Hsuan Chung, Quincy Li, Chih-Yung Lin, Mu-Chi Chiang, Shien-Yang Wu, Jonathan Chang:
A 16 nm 128 Mb SRAM in High-κ Metal-Gate FinFET Technology With Write-Assist Circuitry for Low-VMIN Applications. IEEE J. Solid State Circuits 50(1): 170-177 (2015) - 2014
- [c2]Yen-Huei Chen, Wei-Min Chan, Wei-Cheng Wu, Hung-Jen Liao, Kuo-Hua Pan, Jhon-Jhy Liaw, Tang-Hsuan Chung, Quincy Li, George H. Chang, Chih-Yung Lin, Mu-Chi Chiang, Shien-Yang Wu, Sreedhar Natarajan, Jonathan Chang:
13.5 A 16nm 128Mb SRAM in high-κ metal-gate FinFET technology with write-assist circuitry for low-VMIN applications. ISSCC 2014: 238-239 - 2013
- [c1]Jonathan Chang, Yen-Huei Chen, Hank Cheng, Wei-Min Chan, Hung-Jen Liao, Quincy Li, Stanley Chang, Sreedhar Natarajan, Robin Lee, Ping-Wei Wang, Shyue-Shyh Lin, Chung-Cheng Wu, Kuan-Lun Cheng, Min Cao, George H. Chang:
A 20nm 112Mb SRAM in High-к metal-gate with assist circuitry for low-leakage and low-VMIN applications. ISSCC 2013: 316-317 - 2012
- [j1]Yen-Huei Chen, Shao-Yu Chou, Quincy Li, Wei-Min Chan, Dar Sun, Hung-Jen Liao, Ping Wang, Meng-Fan Chang, Hiroyuki Yamauchi:
Compact Measurement Schemes for Bit-Line Swing, Sense Amplifier Offset Voltage, and Word-Line Pulse Width to Characterize Sensing Tolerance Margin in a 40 nm Fully Functional Embedded SRAM. IEEE J. Solid State Circuits 47(4): 969-980 (2012)
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