"A 5-nm 135-Mb SRAM in EUV and High-Mobility Channel FinFET Technology With ..."

Tsung-Yung Jonathan Chang et al. (2021)

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DOI: 10.1109/JSSC.2020.3034241

access: closed

type: Journal Article

metadata version: 2021-01-09

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Tsung-Yung Jonathan Chang, Yen-Huei Chen, Wei-Min Chan, Hank Cheng, Po-Sheng Wang, Yangsyu Lin, Hidehiro Fujiwara, Robin Lee, Hung-Jen Liao, Ping-Wei Wang, Geoffrey Yeap, Quincy Li:
A 5-nm 135-Mb SRAM in EUV and High-Mobility Channel FinFET Technology With Metal Coupling and Charge-Sharing Write-Assist Circuitry Schemes for High-Density and Low-V_MIN Applications. IEEE J. Solid State Circuits 56(1): 179-187 (2021)

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