"A 20nm 112Mb SRAM in High-к metal-gate with assist circuitry for ..."

Jonathan Chang et al. (2013)

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DOI: 10.1109/ISSCC.2013.6487750

access: closed

type: Conference or Workshop Paper

metadata version: 2017-05-17

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Jonathan Chang, Yen-Huei Chen, Hank Cheng, Wei-Min Chan, Hung-Jen Liao, Quincy Li, Stanley Chang, Sreedhar Natarajan, Robin Lee, Ping-Wei Wang, Shyue-Shyh Lin, Chung-Cheng Wu, Kuan-Lun Cheng, Min Cao, George H. Chang:
A 20nm 112Mb SRAM in High-к metal-gate with assist circuitry for low-leakage and low-VMIN applications. ISSCC 2013: 316-317

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