default search action

combined dblp search
author search
venue search
publication search

ask others

Francesco Velardi

> Home > Persons

Person information

Refine list

refinements active!

zoomed in on ?? of ?? records

view refined list in

export refined list as

showing all ?? records

Journal Articles

see FAQ

What is the meaning of the colors in the publication lists?

2018
[j23]
- view
  authority control:
- export record
  dblp key:
  - journals/mr/AbbateBSTV18
- ask others
- share record
  persistent URL:
  - https://dblp.org/rec/journals/mr/AbbateBSTV18
Carmine Abbate, Giovanni Busatto, Annunziata Sanseverino, D. Tedesco, Francesco Velardi:
Measure of high frequency input impedance to study the instability of power devices in short circuit. Microelectron. Reliab. 88-90: 540-544 (2018)
[j22]
- view
  authority control:
- export record
  dblp key:
  - journals/mr/AbbateBSTV18a
- ask others
- share record
  persistent URL:
  - https://dblp.org/rec/journals/mr/AbbateBSTV18a
Carmine Abbate, Giovanni Busatto, Annunziata Sanseverino, D. Tedesco, Francesco Velardi:
Failure analysis of 650 V enhancement mode GaN HEMT after short circuit tests. Microelectron. Reliab. 88-90: 677-683 (2018)
[j21]
- view
  authority control:
- export record
  dblp key:
  - journals/mr/AbbateBMSSTV18
- ask others
- share record
  persistent URL:
  - https://dblp.org/rec/journals/mr/AbbateBMSSTV18
Carmine Abbate, Giovanni Busatto, S. Mattiazzo, Annunziata Sanseverino, L. Silvestrin, D. Tedesco, Francesco Velardi:
Progressive drain damage in SiC power MOSFETs exposed to ionizing radiation. Microelectron. Reliab. 88-90: 941-945 (2018)
2017
[j20]
- view
  authority control:
- export record
  dblp key:
  - journals/mr/AbbateBSTV17
- ask others
- share record
  persistent URL:
  - https://dblp.org/rec/journals/mr/AbbateBSTV17
Carmine Abbate, Giovanni Busatto, Annunziata Sanseverino, D. Tedesco, Francesco Velardi:
Experimental study of the instabilities observed in 650 V enhancement mode GaN HEMT during short circuit. Microelectron. Reliab. 76-77: 314-320 (2017)
2015
[j19]
- view
  authority control:
- export record
  dblp key:
  - journals/mr/AbbateBIMSSTV15
- ask others
- share record
  persistent URL:
  - https://dblp.org/rec/journals/mr/AbbateBIMSSTV15
Carmine Abbate, Giovanni Busatto, Francesco Iannuzzo, S. Mattiazzo, Annunziata Sanseverino, L. Silvestrin, D. Tedesco, Francesco Velardi:
Experimental study of Single Event Effects induced by heavy ion irradiation in enhancement mode GaN power HEMT. Microelectron. Reliab. 55(9-10): 1496-1500 (2015)
2014
[j18]
- view
  authority control:
- export record
  dblp key:
  - journals/mr/AbbateIBSVRV14
- ask others
- share record
  persistent URL:
  - https://dblp.org/rec/journals/mr/AbbateIBSVRV14
Carmine Abbate, Francesco Iannuzzo, Giovanni Busatto, Annunziata Sanseverino, Francesco Velardi, Cesare Ronsisvalle, James Victory:
Turn-off instabilities in large area IGBTs. Microelectron. Reliab. 54(9-10): 1927-1934 (2014)
[j17]
- view
  authority control:
- export record
  dblp key:
  - journals/mr/AbbateBCDGISV14
- ask others
- share record
  persistent URL:
  - https://dblp.org/rec/journals/mr/AbbateBCDGISV14
Carmine Abbate, Giovanni Busatto, Paolo Cova, Nicola Delmonte, Francesco Giuliani, Francesco Iannuzzo, Annunziata Sanseverino, Francesco Velardi:
Thermal damage in SiC Schottky diodes induced by SE heavy ions. Microelectron. Reliab. 54(9-10): 2200-2206 (2014)
2013
[j16]
- view
  authority control:
- export record
  dblp key:
  - journals/mr/AbbateBIRSV13
- ask others
- share record
  persistent URL:
  - https://dblp.org/rec/journals/mr/AbbateBIRSV13
Carmine Abbate, Giovanni Busatto, Francesco Iannuzzo, Cesare Ronsisvalle, Annunziata Sanseverino, Francesco Velardi:
Scattering parameter approach applied to the stability analysis of power IGBTs in short circuit. Microelectron. Reliab. 53(9-11): 1707-1712 (2013)
2012
[j15]
- view
  authority control:
- export record
  dblp key:
  - journals/mr/BusattoLISV12
- ask others
- share record
  persistent URL:
  - https://dblp.org/rec/journals/mr/BusattoLISV12
Giovanni Busatto, Valentina De Luca, Francesco Iannuzzo, Annunziata Sanseverino, Francesco Velardi:
Behavior of power MOSFETs during heavy ions irradiation performed after γ-rays exposure. Microelectron. Reliab. 52(9-10): 2363-2367 (2012)
2011
[j14]
- view
  authority control:
- export record
  dblp key:
  - journals/mr/BusattoBCGIMPSS11
- ask others
- share record
  persistent URL:
  - https://dblp.org/rec/journals/mr/BusattoBCGIMPSS11
Giovanni Busatto, D. Bisello, Giuseppe Currò, Piero Giubilato, Francesco Iannuzzo, S. Mattiazzo, D. Pantano, Annunziata Sanseverino, L. Silvestrin, M. Tessaro, Francesco Velardi, Jeffery Wyss:
A new test methodology for an exhaustive study of single-event-effects on power MOSFETs. Microelectron. Reliab. 51(9-11): 1995-1998 (2011)
2010
[j13]
- view
  authority control:
- export record
  dblp key:
  - journals/mr/BusattoCIPSV10
- ask others
- share record
  persistent URL:
  - https://dblp.org/rec/journals/mr/BusattoCIPSV10
Giovanni Busatto, Giuseppe Currò, Francesco Iannuzzo, Alberto Porzio, Annunziata Sanseverino, Francesco Velardi:
Experimental study and numerical investigation on the formation of single event gate damages induced on medium voltage power MOSFET. Microelectron. Reliab. 50(9-11): 1842-1847 (2010)
2009
[j12]
- view
  authority control:
- export record
  dblp key:
  - journals/mr/BusattoCIPSV09
- ask others
- share record
  persistent URL:
  - https://dblp.org/rec/journals/mr/BusattoCIPSV09
Giovanni Busatto, Giuseppe Currò, Francesco Iannuzzo, Alberto Porzio, Annunziata Sanseverino, Francesco Velardi:
Experimental study about gate oxide damages in patterned MOS capacitor irradiated with heavy ions. Microelectron. Reliab. 49(9-11): 1033-1037 (2009)
2008
[j11]
- view
  authority control:
- export record
  dblp key:
  - journals/mr/BusattoCIPSV08
- ask others
- share record
  persistent URL:
  - https://dblp.org/rec/journals/mr/BusattoCIPSV08
Giovanni Busatto, Giuseppe Currò, Francesco Iannuzzo, Alberto Porzio, Annunziata Sanseverino, Francesco Velardi:
Experimental evidence of "latent gate oxide damages" in medium voltage power MOSFET as a result of heavy ions exposure. Microelectron. Reliab. 48(8-9): 1306-1309 (2008)
2006
[j10]
- view
  authority control:
- export record
  dblp key:
  - journals/mr/BusattoIPSVC06
- ask others
- share record
  persistent URL:
  - https://dblp.org/rec/journals/mr/BusattoIPSVC06
Giovanni Busatto, Francesco Iannuzzo, Alberto Porzio, Annunziata Sanseverino, Francesco Velardi, Giuseppe Currò:
Experimental study of power MOSFET's gate damage in radiation environment. Microelectron. Reliab. 46(9-11): 1854-1857 (2006)
2005
[j9]
- view
  authority control:
- export record
  dblp key:
  - journals/mr/BusattoPVISC05
- ask others
- share record
  persistent URL:
  - https://dblp.org/rec/journals/mr/BusattoPVISC05
Giovanni Busatto, Alberto Porzio, Francesco Velardi, Francesco Iannuzzo, Annunziata Sanseverino, Giuseppe Currò:
Experimental and Numerical investigation about SEB/SEGR of Power MOSFET. Microelectron. Reliab. 45(9-11): 1711-1716 (2005)
2004
[j8]
- view
  authority control:
- export record
  dblp key:
  - journals/mr/VelardiIBPSCCF04
- ask others
- share record
  persistent URL:
  - https://dblp.org/rec/journals/mr/VelardiIBPSCCF04
Francesco Velardi, Francesco Iannuzzo, Giovanni Busatto, Alberto Porzio, Annunziata Sanseverino, Giuseppe Currò, Alessandra Cascio, Ferruccio Frisina:
The Role of the Parasitic BJT Parameters on the Reliability of New Generation Power MOSFET during Heavy Ion Exposure. Microelectron. Reliab. 44(9-11): 1407-1411 (2004)
2003
[j7]
- view
  authority control:
- export record
  dblp key:
  - journals/mr/VelardiIBWC03
- ask others
- share record
  persistent URL:
  - https://dblp.org/rec/journals/mr/VelardiIBWC03
Francesco Velardi, Francesco Iannuzzo, Giovanni Busatto, Jeffery Wyss, A. Candelori:
Experimental study of charge generation mechanisms in power MOSFETs due to energetic particle impact^,. Microelectron. Reliab. 43(4): 549-555 (2003)
[j6]
- view
  authority control:
- export record
  dblp key:
  - journals/mr/BusattoCIVR03
- ask others
- share record
  persistent URL:
  - https://dblp.org/rec/journals/mr/BusattoCIVR03
Giovanni Busatto, Roberto La Capruccia, Francesco Iannuzzo, Francesco Velardi, Roberto Roncella:
MAGFET based current sensing for power integrated circuit. Microelectron. Reliab. 43(4): 577-583 (2003)
[j5]
- view
  authority control:
- export record
  dblp key:
  - journals/mr/VelardiaIBWSCCCF03
- ask others
- share record
  persistent URL:
  - https://dblp.org/rec/journals/mr/VelardiaIBWSCCCF03
Francesco Velardi, Francesco Iannuzzo, Giovanni Busatto, Jeffery Wyss, Annunziata Sanseverino, A. Candelori, Giuseppe Currò, Alessandra Cascio, Ferruccio Frisina:
Reliability of Medium Blocking Voltage Power VDMOSFET in Radiation Environment. Microelectron. Reliab. 43(9-11): 1847-1851 (2003)
[j4]
- view
  authority control:
- export record
  dblp key:
  - journals/mr/BusattoIVVP03
- ask others
- share record
  persistent URL:
  - https://dblp.org/rec/journals/mr/BusattoIVVP03
Giovanni Busatto, Francesco Iannuzzo, Francesco Velardi, M. Valentino, Giampiero Pepe:
Non-Destructive Detection of Current Distribution in Power Modules based on Pulsed Magnetic Measurement. Microelectron. Reliab. 43(9-11): 1907-1912 (2003)
2002
[j3]
- view
  authority control:
- export record
  dblp key:
  - journals/mr/VelardiIBWK02
- ask others
- share record
  persistent URL:
  - https://dblp.org/rec/journals/mr/VelardiIBWK02
Francesco Velardi, Francesco Iannuzzo, Giovanni Busatto, Jeffery Wyss, A. Kaminksy:
The Reliability of New Generation Power MOSFETs in Radiation Environment. Microelectron. Reliab. 42(9-11): 1629-1634 (2002)
[j2]
- view
  authority control:
- export record
  dblp key:
  - journals/mr/BusattoCFBIV02
- ask others
- share record
  persistent URL:
  - https://dblp.org/rec/journals/mr/BusattoCFBIV02
Giovanni Busatto, B. Cascone, Luigi Fratelli, M. Balsamo, Francesco Iannuzzo, Francesco Velardi:
Non-destructive high temperature characterisation of high-voltage IGBTs. Microelectron. Reliab. 42(9-11): 1635-1640 (2002)
2001
[j1]
- view
  authority control:
- export record
  dblp key:
  - journals/mr/BusattoIVW01
- ask others
- share record
  persistent URL:
  - https://dblp.org/rec/journals/mr/BusattoIVW01
Giovanni Busatto, Francesco Iannuzzo, Francesco Velardi, Jeffery Wyss:
Non-destructive tester for single event burnout of power diodes. Microelectron. Reliab. 41(9-10): 1725-1729 (2001)

Coauthor Index

see FAQ

manage site settings

To protect your privacy, all features that rely on external API calls from your browser are turned off by default. You need to opt-in for them to become active. All settings here will be stored as cookies with your web browser. For more information see our F.A.Q.