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ORCIDAnnunziata Sanseverino
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2010 – 2019
- 2018
[j18]Carmine Abbate, Giovanni Busatto
, Annunziata Sanseverino, D. Tedesco, Francesco Velardi:
Measure of high frequency input impedance to study the instability of power devices in short circuit. Microelectron. Reliab. 88-90: 540-544 (2018)- [j17]Carmine Abbate, Giovanni Busatto, Annunziata Sanseverino, D. Tedesco, Francesco Velardi:
Failure analysis of 650 V enhancement mode GaN HEMT after short circuit tests. Microelectron. Reliab. 88-90: 677-683 (2018) - [j16]Carmine Abbate, Giovanni Busatto, S. Mattiazzo, Annunziata Sanseverino, L. Silvestrin, D. Tedesco, Francesco Velardi:
Progressive drain damage in SiC power MOSFETs exposed to ionizing radiation. Microelectron. Reliab. 88-90: 941-945 (2018) - 2017
- [j15]Carmine Abbate, Giovanni Busatto, Annunziata Sanseverino, D. Tedesco, Francesco Velardi:
Experimental study of the instabilities observed in 650 V enhancement mode GaN HEMT during short circuit. Microelectron. Reliab. 76-77: 314-320 (2017) - 2015
- [j14]Carmine Abbate, Giovanni Busatto, Francesco Iannuzzo, S. Mattiazzo, Annunziata Sanseverino, L. Silvestrin, D. Tedesco, Francesco Velardi:
Experimental study of Single Event Effects induced by heavy ion irradiation in enhancement mode GaN power HEMT. Microelectron. Reliab. 55(9-10): 1496-1500 (2015) - 2014
- [j13]Carmine Abbate, Francesco Iannuzzo, Giovanni Busatto, Annunziata Sanseverino, Francesco Velardi, Cesare Ronsisvalle, James Victory:
Turn-off instabilities in large area IGBTs. Microelectron. Reliab. 54(9-10): 1927-1934 (2014) - [j12]Carmine Abbate, Giovanni Busatto, Paolo Cova, Nicola Delmonte, Francesco Giuliani, Francesco Iannuzzo, Annunziata Sanseverino, Francesco Velardi:
Thermal damage in SiC Schottky diodes induced by SE heavy ions. Microelectron. Reliab. 54(9-10): 2200-2206 (2014) - 2013
- [j11]Carmine Abbate, Giovanni Busatto, Francesco Iannuzzo, Cesare Ronsisvalle, Annunziata Sanseverino, Francesco Velardi:
Scattering parameter approach applied to the stability analysis of power IGBTs in short circuit. Microelectron. Reliab. 53(9-11): 1707-1712 (2013) - 2012
- [j10]Giovanni Busatto, Valentina De Luca, Francesco Iannuzzo, Annunziata Sanseverino, Francesco Velardi:
Behavior of power MOSFETs during heavy ions irradiation performed after γ-rays exposure. Microelectron. Reliab. 52(9-10): 2363-2367 (2012) - [j9]Stefania Baccaro, Giovanni Busatto, Mauro Citterio, Paolo Cova, Nicola Delmonte, Francesco Iannuzzo, Agostino Lanza, Marco Riva, Annunziata Sanseverino, Giorgio Spiazzi:
Reliability oriented design of power supplies for high energy physics applications. Microelectron. Reliab. 52(9-10): 2465-2470 (2012) - 2011
- [j8]Giovanni Busatto, D. Bisello, Giuseppe Currò, Piero Giubilato, Francesco Iannuzzo, S. Mattiazzo, D. Pantano, Annunziata Sanseverino, L. Silvestrin, M. Tessaro, Francesco Velardi, Jeffery Wyss:
A new test methodology for an exhaustive study of single-event-effects on power MOSFETs. Microelectron. Reliab. 51(9-11): 1995-1998 (2011) - 2010
- [j7]Giovanni Busatto, Giuseppe Currò, Francesco Iannuzzo, Alberto Porzio, Annunziata Sanseverino, Francesco Velardi:
Experimental study and numerical investigation on the formation of single event gate damages induced on medium voltage power MOSFET. Microelectron. Reliab. 50(9-11): 1842-1847 (2010)
2000 – 2009
- 2009
- [j6]Giovanni Busatto, Giuseppe Currò, Francesco Iannuzzo, Alberto Porzio, Annunziata Sanseverino, Francesco Velardi:
Experimental study about gate oxide damages in patterned MOS capacitor irradiated with heavy ions. Microelectron. Reliab. 49(9-11): 1033-1037 (2009) - 2008
- [j5]Giovanni Busatto, Giuseppe Currò, Francesco Iannuzzo, Alberto Porzio, Annunziata Sanseverino, Francesco Velardi:
Experimental evidence of "latent gate oxide damages" in medium voltage power MOSFET as a result of heavy ions exposure. Microelectron. Reliab. 48(8-9): 1306-1309 (2008) - 2006
- [j4]Giovanni Busatto, Francesco Iannuzzo, Alberto Porzio, Annunziata Sanseverino, Francesco Velardi, Giuseppe Currò:
Experimental study of power MOSFET's gate damage in radiation environment. Microelectron. Reliab. 46(9-11): 1854-1857 (2006) - 2005
- [j3]Giovanni Busatto, Alberto Porzio, Francesco Velardi, Francesco Iannuzzo, Annunziata Sanseverino, Giuseppe Currò:
Experimental and Numerical investigation about SEB/SEGR of Power MOSFET. Microelectron. Reliab. 45(9-11): 1711-1716 (2005) - 2004
- [j2]Francesco Velardi, Francesco Iannuzzo, Giovanni Busatto, Alberto Porzio, Annunziata Sanseverino, Giuseppe Currò, Alessandra Cascio, Ferruccio Frisina:
The Role of the Parasitic BJT Parameters on the Reliability of New Generation Power MOSFET during Heavy Ion Exposure. Microelectron. Reliab. 44(9-11): 1407-1411 (2004) - 2003
- [j1]Francesco Velardi, Francesco Iannuzzo, Giovanni Busatto, Jeffery Wyss, Annunziata Sanseverino, A. Candelori, Giuseppe Currò, Alessandra Cascio, Ferruccio Frisina:
Reliability of Medium Blocking Voltage Power VDMOSFET in Radiation Environment. Microelectron. Reliab. 43(9-11): 1847-1851 (2003)
Coauthor Index
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