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Publication search results
found 29 matches
- 2024
- Jing Chen, Jiajun Guo, Qing Yao, Kemeng Yang, Jun Zhang, Jiafei Yao, Yufeng Guo:
Step thickness drift region automatic design of SOI LDMOS using physics-inspired constrained simulated annealing algorithm. Microelectron. J. 153: 106410 (2024) - Sunghwan Cho, Byoungdeog Choi:
String-level compact modeling of erase operations in the body-floated vertical channel of 3D charge trapping flash memory. Microelectron. J. 153: 106423 (2024) - Hanqi Gao, Chao Yang, Jing Jin, Jianjun Zhou:
A 2-36 GHz CMOS LNA with π-Network-Based wideband interstage matching technique for software-defined radio systems. Microelectron. J. 153: 106431 (2024) - Sheng Gao, Xianfeng Zhang, Qi Wang, Shengqi Yu, Yang Zuo, Hongsheng Zhang, Yi Huang:
Asymmetric trench SiC MOSFET with integrated channel accumulation diode for enhanced reverse conduction and switching characteristics. Microelectron. J. 153: 106436 (2024) - Shih-Chang Hsia, Wei-Cun Chen:
A temperature compensation technique for constant current LED driver. Microelectron. J. 153: 106396 (2024) - Zhengfeng Huang, Xin Chen, Xinyu Jiang, Lei Ai, Huaguo Liang, Yiming Ouyang, Tianming Ni:
Design of radiation hardened latch with low delay and tolerance of quadruple-node-upset in 32 nm process. Microelectron. J. 153: 106428 (2024) - Khaled Humood, Yihan Pan, Shiwei Wang, Alexander Serb, Themis Prodromakis:
Design of a low-power Digital-to-Pulse Converter (DPC) for in-memory-computing applications. Microelectron. J. 153: 106420 (2024) - Pablo Jiménez-Fernández, Alberto Rodríguez-Pérez, Enrique Prefasi, Francisco Sierra, Rocío del Río, Oscar Guerra:
An LC-tank based DCO for low-power high-speed applications using full-custom nMOS-type varactors. Microelectron. J. 153: 106398 (2024) - Xinquan Lai, Zhiwen Niu, Bingyuan Wang, Linxi Li:
A 0.075 mm2 BJT-based temperature sensor with a one-point trimmed 3σ inaccuracy of ±0.97 °C from -40 °C to 120 °C. Microelectron. J. 153: 106418 (2024) - Geon-Hee Lee, Tae-Hee Lee, Ji-Soo Choi, Young-Hun Cho, Ye-Jin Kim, Hoon-Kyu Shin, Sang-Mo Koo:
Effects of NiO doping and trench wall tilt on Ga2O3 PiN diodes performance. Microelectron. J. 153: 106399 (2024) - Jianzheng Li, Yuchen Zhao, Weimin Hu, Jinghan Yao, Ziwei Liu, Yajie Qin:
A 62.5 kHz-BW 92 dB-SNDR noise-shaping SAR ADC with NS-CAL method. Microelectron. J. 153: 106401 (2024) - Yue Liang, Qin Chen, Jing Feng, Lin Lu, Tao Zhang, Xiangning Fan, Lianming Li:
A V-band injection locking tripler with 26.8% locking range and 7.3-dBm output power in 65 nm CMOS. Microelectron. J. 153: 106426 (2024) - Zhiting Lin, Runru Yu, Da Huo, Qingchuan Zhu, Miao Long, Yongqi Qin, Yanchun Liu, Lintao Chen, Simin Wang, Ting Wang, Yousheng Xing, Zeshi Wen, Yu Liu, Xin Li, Chenghu Dai, Qiang Zhao, Chunyu Peng, Xiulong Wu:
A 28-nm 9T SRAM-based CIM macro with capacitance weighting module and redundant array-assisted ADC. Microelectron. J. 153: 106397 (2024) - Hu Liu, Peifeng Li, Lei Pan, Xiaoyu Zhou, Pengyu Wang, Yubin Li:
A high sensitivity biosensor based on fin-type electron-hole bilayer TFET. Microelectron. J. 153: 106437 (2024) - Qi Liu, Ming Ling, Yanxiang Zhu, Yibo Rui, Rui Wang:
Preventing short violations in clock routing with an SVM classifier before powerplanning and placement. Microelectron. J. 153: 106429 (2024) - Yiming Ouyang, Tianbao Zhang, Jianhua Li, Huaguo Liang:
Fault-tolerant routing for reliable packet transmission in on-chip networks. Microelectron. J. 153: 106425 (2024) - Hadi Pahlavanzadeh, Reza Navabi, Saba Iesakhani:
A common-mode insensitive thyristor-based latch regenerative comparator for low supply voltage applications. Microelectron. J. 153: 106419 (2024) - Muhammad Abdul Rehman, Bilal Mushtaq, Sohail Khalid, Mujeeb Ur Rehman:
Design of a miniaturized multi resonance resonator based highly selective dual wideband bandpass filter. Microelectron. J. 153: 106411 (2024) - Soumya Sen, Mamta Khosla, Ashish Raman:
Design and investigation of electrostatic doped heterostructure vertical Si(1-x)Gex/Si nanotube TFET. Microelectron. J. 153: 106417 (2024) - Xiaolin Shi, Shaomeng Li, Kaiming Nie:
An 11-bit low power column-parallel single slope ADC with comparator toggle prediction technique for CMOS image sensor. Microelectron. J. 153: 106427 (2024) - Roopesh Singh, Sushant Mittal, Shivam Verma:
Junctionless accumulation-mode SOI ferroelectric FinFET for synaptic weights. Microelectron. J. 153: 106413 (2024) - Gunti Sneha, Sidhartha Dash, Guru Prasad Mishra:
Z-shaped gate tunnel FET with graphene channel: An extensive investigation of its analog and linearity performance. Microelectron. J. 153: 106412 (2024) - Mingkang Wan, Yuwei Zhang, Xian Tang:
An energy-efficient 16 MS/s 10-bit SAR ADC with MSB-block switching scheme. Microelectron. J. 153: 106369 (2024) - Jianye Wang, Yazi Cao, Wei Wu, Gaofeng Wang:
Miniaturized bandpass filter with ultrawide-stopband and high selectivity using glass-based IPD technology. Microelectron. J. 153: 106402 (2024) - Li Wang, Dehai Zhang, Jin Meng, Yu Tian:
An enhanced efficiency 170-260 GHz frequency doubler based on three points resonance matching technique. Microelectron. J. 153: 106424 (2024) - Hui Xu, Lin Tang, Ruijun Ma, Huaguo Liang, Zhengfeng Huang, Tianming Ni, Jiuqi Li, Xiaodong Ai:
A cost-effective and highly robust triple-node-upset self-recoverable latch design based on dual-output C-elements. Microelectron. J. 153: 106422 (2024) - Shengchang Zhang, Guangbao Shan, Yi Luo, Hui Deng:
A wafer-level 3D integrated T/R microsystem with 0.5-wavelength self-matching connectors. Microelectron. J. 153: 106421 (2024) - Yinghui Zhong, X. L. Han, H. Q. Yun, B. Mei, Yongbo Su, Zhi Jin, C. Zhang:
Radiation effects modeling of InP-based HEMT based on neural networks. Microelectron. J. 153: 106414 (2024) - Yingxu Zhou, Wei Zhang, Tingting Wu, Wangping Chen, Shuang Du, Dongning Hao:
High-precision vernier-type optoelectronic integrated chip design. Microelectron. J. 153: 106400 (2024)
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