default search action
"A 210-MHz 4.23 fJ Energy/Bit 1-kb Asymmetrical Schmitt-Trigger-Based SRAM ..."
Ralph Gerard B. Sangalang et al. (2023)
- Ralph Gerard B. Sangalang, Shiva Reddy, Lean Karlo S. Tolentino, You-Wei Shen, Oliver Lexter July A. Jose, Chua-Chin Wang:
A 210-MHz 4.23 fJ Energy/Bit 1-kb Asymmetrical Schmitt-Trigger-Based SRAM Using 40-nm CMOS Process. IEEE Trans. Circuits Syst. II Express Briefs 70(10): 3862-3866 (2023)
manage site settings
To protect your privacy, all features that rely on external API calls from your browser are turned off by default. You need to opt-in for them to become active. All settings here will be stored as cookies with your web browser. For more information see our F.A.Q.