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"A 22-nm 32-Mb Embedded STT-MRAM Macro Achieving 5.9-ns Random Read Access ..."
Takahiro Shimoi et al. (2024)
- Takahiro Shimoi, Ken Matsubara, Tomoya Saito, Tomoya Ogawa, Yasuhiko Taito, Yoshinobu Kaneda, Masayuki Izuna, Koichi Takeda, Hidenori Mitani, Takashi Ito, Takashi Kono:
A 22-nm 32-Mb Embedded STT-MRAM Macro Achieving 5.9-ns Random Read Access and 7.4-MB/s Write Throughput at up to 150 °C. IEEE J. Solid State Circuits 59(4): 1283-1292 (2024)
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