"A loadless 6T SRAM cell for sub- & near- threshold operation ..."

Even Låte, Trond Ytterdal, Snorre Aunet (2018)

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DOI: 10.1016/J.VLSI.2018.05.006

access: closed

type: Journal Article

metadata version: 2020-02-20

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Even Låte, Trond Ytterdal, Snorre Aunet:
A loadless 6T SRAM cell for sub- & near- threshold operation implemented in 28 nm FD-SOI CMOS technology. Integr. 63: 56-63 (2018)

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