"Robust PEALD SiN spacer for gate first high-k metal gate integration."

D. H. Triyoso et al. (2012)

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DOI: 10.1109/ICICDT.2012.6232870

access: closed

type: Conference or Workshop Paper

metadata version: 2023-09-30

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D. H. Triyoso, V. Jaschke, Jeff Shu, S. Mutas, Klaus Hempel, Jamie K. Schaeffer, Markus Lenski:
Robust PEALD SiN spacer for gate first high-k metal gate integration. ICICDT 2012: 1-4

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