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ORCIDIl-Han Park
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Journal Articles
- 2024
[j9]Jong Oh Park
, Jun Seong Lee, Il-Han Park:
Magnetic Field Analysis of Electric Current in Coplanar Coils Using Equivalent Permanent Magnetization and Magnetic Scalar Potential. IEEE Access 12: 27556-27565 (2024)- 2020
- [j8]Hyemin Choe, Jeongju Jee, Seung-Chan Lim, Sung-Min Joe, Il-Han Park, Hyuncheol Park:
Machine-Learning-Based Read Reference Voltage Estimation for NAND Flash Memory Systems Without Knowledge of Retention Time. IEEE Access 8: 176416-176429 (2020) - 2018
- [j7]Chulbum Kim, Doo-Hyun Kim, Woopyo Jeong, Hyun-Jin Kim, Il-Han Park, Hyun Wook Park, Jong-Hoon Lee, Jiyoon Park, Yang-Lo Ahn, Ji Young Lee, Seungbum Kim, Hyun-Jun Yoon, Jaedoeg Yu, Nayoung Choi, Nahyun Kim, Hwajun Jang, Jonghoon Park, Seunghwan Song, Yongha Park, Jinbae Bang, Sanggi Hong, Youngdon Choi, Moosung Kim, Hyunggon Kim, Pansuk Kwak, Jeong-Don Ihm, Dae-Seok Byeon, Jin-Yub Lee, Ki-Tae Park, Kyehyun Kyung:
A 512-Gb 3-b/Cell 64-Stacked WL 3-D-NAND Flash Memory. IEEE J. Solid State Circuits 53(1): 124-133 (2018) - 2013
- [j6]Yong-Sung Cho, Il-Han Park, Sangyong Yoon, Nam-Hee Lee, Sang-Hyun Joo, Ki-Whan Song, Kihwan Choi, Jin-Man Han, Kyehyun Kyung, Young-Hyun Jun:
Adaptive Multi-Pulse Program Scheme Based on Tunneling Speed Classification for Next Generation Multi-Bit/Cell NAND FLASH. IEEE J. Solid State Circuits 48(4): 948-959 (2013) - 2009
- [j5]Yoon Kim, Seongjae Cho, Gil Sung Lee, Il-Han Park, Jong Duk Lee, Hyungcheol Shin, Byung-Gook Park:
3-Dimensional Terraced NAND (3D TNAND) Flash Memory-Stacked Version of Folded NAND Array. IEICE Trans. Electron. 92-C(5): 653-658 (2009) - [j4]Doo-Hyun Kim, Il-Han Park, Seongjae Cho, Jong Duk Lee, Hyungcheol Shin, Byung-Gook Park:
Simulation of Retention Characteristics in Double-Gate Structure Multi-Bit SONOS Flash Memory. IEICE Trans. Electron. 92-C(5): 659-663 (2009) - 2008
- [j3]Seongjae Cho, Il-Han Park, Jung Hoon Lee, Jang-Gn Yun, Doo-Hyun Kim, Jong Duk Lee, Hyungcheol Shin, Byung-Gook Park:
Establishing Read Operation Bias Schemes for 3-D Pillar Structure Flash Memory Devices to Overcome Paired Cell Interference (PCI). IEICE Trans. Electron. 91-C(5): 731-735 (2008) - [j2]Jang-Gn Yun, Il-Han Park, Seongjae Cho, Jung Hoon Lee, Doo-Hyun Kim, Gil Sung Lee, Yoon Kim, Jong Duk Lee, Byung-Gook Park:
Characterization of 2-bit Recessed Channel Memory with Lifted-Charge Trapping Node (L-CTN) Scheme. IEICE Trans. Electron. 91-C(5): 742-746 (2008) - 2007
- [j1]Seongjae Cho, Jang-Gn Yun, Il-Han Park, Jung Hoon Lee, Jong Pil Kim, Jong Duk Lee, Hyungcheol Shin, Byung-Gook Park:
Analyses on Current Characteristics of 3-D MOSFET Determined by Junction Doping Profiles for Nonvolatile Memory Devices. IEICE Trans. Electron. 90-C(5): 988-993 (2007)
Conference and Workshop Papers
- 2023
- [c5]Kyungmoon Kim, Yujeong Seo, Sejun Park, Woojae Jang, Dongho Yoo, Joonsung Lim, Il-Han Park, Jaeduk Lee, Kyungyoon Noh, Sujin Ahn, Sunghoi Hur:
High Bit Cost Scalability and Reliable Cell Characteristics for 7th Generation 1Tb 4Bit/Cell 3D-NAND Flash. VLSI Technology and Circuits 2023: 1-2 - 2017
- [c4]Chulbum Kim, Ji-Ho Cho, Woopyo Jeong, Il-Han Park, Hyun Wook Park, Doo-Hyun Kim, Daewoon Kang, Sunghoon Lee, Ji-Sang Lee, Wontae Kim, Jiyoon Park, Yang-Lo Ahn, Jiyoung Lee, Jong-Hoon Lee, Seungbum Kim, Hyun-Jun Yoon, Jaedoeg Yu, Nayoung Choi, Yelim Kwon, Nahyun Kim, Hwajun Jang, Jonghoon Park, Seunghwan Song, Yongha Park, Jinbae Bang, Sangki Hong, Byunghoon Jeong, Hyun-Jin Kim, Chunan Lee, Young-Sun Min, Inryul Lee, In-Mo Kim, Sunghoon Kim, Dongkyu Yoon, Ki-Sung Kim, Youngdon Choi, Moosung Kim, Hyunggon Kim, Pansuk Kwak, Jeong-Don Ihm, Dae-Seok Byeon, Jin-Yub Lee, Ki-Tae Park, Kyehyun Kyung:
11.4 A 512Gb 3b/cell 64-stacked WL 3D V-NAND flash memory. ISSCC 2017: 202-203 - 2016
- [c3]Seungjae Lee, Jin-Yub Lee, Il-Han Park, Jong-Yeol Park, Sung-Won Yun, Minsu Kim, Jong-Hoon Lee, Min-Seok Kim, Kangbin Lee, Taeeun Kim, Byungkyu Cho, Dooho Cho, Sangbum Yun, Jung-No Im, Hyejin Yim, Kyung-Hwa Kang, Suchang Jeon, Sungkyu Jo, Yang-Lo Ahn, Sung-Min Joe, Suyong Kim, Deok-kyun Woo, Jiyoon Park, Hyun Wook Park, Youngmin Kim, Jonghoon Park, Yongsu Choi, Makoto Hirano, Jeong-Don Ihm, Byunghoon Jeong, Seon-Kyoo Lee, Moosung Kim, Hokil Lee, Sungwhan Seo, Hongsoo Jeon, Chan-ho Kim, Hyunggon Kim, Jintae Kim, Yongsik Yim, Hoosung Kim, Dae-Seok Byeon, Hyang-Ja Yang, Ki-Tae Park, Kyehyun Kyung, Jeong-Hyuk Choi:
7.5 A 128Gb 2b/cell NAND flash memory in 14nm technology with tPROG=640µs and 800MB/s I/O rate. ISSCC 2016: 138-139 - 2012
- [c2]Daeyeal Lee, Ik Joon Chang, Sangyong Yoon, Joonsuc Jang, Dong-Su Jang, Wook-Ghee Hahn, Jong-Yeol Park, Doo-Gon Kim, Chiweon Yoon, Bong-Soon Lim, ByungJun Min, Sung-Won Yun, Ji-Sang Lee, Il-Han Park, Kyung-Ryun Kim, Jeong-Yun Yun, Youse Kim, Yong-Sung Cho, Kyung-Min Kang, Sang-Hyun Joo, Jin-Young Chun, Jung-No Im, Seunghyuk Kwon, Seokjun Ham, Ansoo Park, Jae-Duk Yu, Nam-Hee Lee, Tae-Sung Lee, Moosung Kim, Hoosung Kim, Ki-Whan Song, Byung-Gil Jeon, Kihwan Choi, Jin-Man Han, Kyehyun Kyung, Youngho Lim, Young-Hyun Jun:
A 64Gb 533Mb/s DDR interface MLC NAND Flash in sub-20nm technology. ISSCC 2012: 430-432 - [c1]Yong-Sung Cho, Il-Han Park, Sangyong Yoon, Nam-Hee Lee, Sang-Hyun Joo, Ki-Whan Song, Kihwan Choi, Jin-Man Han, Kyehyun Kyung, Young-Hyun Jun:
Adaptive multi-pulse program scheme based on tunneling speed classification for next generation multi-bit/cell NAND FLASH. VLSIC 2012: 136-137
Coauthor Index
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