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ORCIDNaoya Tokiwa
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2020 – today
- 2021
[c5]Tsutomu Higuchi, Takuyo Kodama, Koji Kato, Ryo Fukuda, Naoya Tokiwa, Mitsuhiro Abe, Teruo Takagiwa, Yuki Shimizu, Junji Musha, Katsuaki Sakurai, Jumpei Sato, Tetsuaki Utsumi, Kazuhide Yoneya, Yasuhiro Suematsu, Toshifumi Hashimoto, Takeshi Hioka, Kosuke Yanagidaira, Masatsugu Kojima, Junya Matsuno, Kei Shiraishi, Kensuke Yamamoto, Shintaro Hayashi, Tomoharu Hashiguchi, Kazuko Inuzuka, Akio Sugahara, Mitsuaki Honma, Keiji Tsunoda, Kazumasa Yamamoto, Takahiro Sugimoto, Tomofumi Fujimura, Mizuki Kaneko, Hiroki Date, Osamu Kobayashi, Takatoshi Minamoto, Ryoichi Tachibana, Itaru Yamaguchi, Juan Lee, Venky Ramachandra, Srinivas Rajendra, Tianyu Tang, Siddhesh Darne, Jiwang Lee, Jason Li, Toru Miwa, Ryuji Yamashita, Hiroshi Sugawara, Naoki Ookuma, Masahiro Kano, Hiroyuki Mizukoshi, Yuki Kuniyoshi, Mitsuyuki Watanabe, Kei Akiyama, Hirotoshi Mori, Akira Arimizu, Yoshito Katano, Masakazu Ehama, Hiroshi Maejima, Koji Hosono, Masahiro Yoshihara:
30.4 A 1Tb 3b/Cell 3D-Flash Memory in a 170+ Word-Line-Layer Technology. ISSCC 2021: 428-430
2010 – 2019
- 2019
- [c4]Chang Hua Siau, Kwang-Ho Kim, Seungpil Lee, Katsuaki Isobe, Noboru Shibata, Kapil Verma, Takuya Ariki, Jason Li, Jong Yuh, Anirudh Amarnath, Qui Nguyen, Ohwon Kwon, Stanley Jeong, Heguang Li, Hua-Ling Hsu, Taiyuan Tseng, Steve Choi, Siddhesh Darne, Pradeep Anantula, Alex Yap, Hardwell Chibvongodze, Hitoshi Miwa, Minoru Yamashita, Mitsuyuki Watanabe, Koichiro Hayashi, Yosuke Kato, Toru Miwa, Jang Yong Kang, Masatoshi Okumura, Naoki Ookuma, Muralikrishna Balaga, Venky Ramachandra, Aki Matsuda, Swaroop Kulkarni, Raghavendra Rachineni, Pai K. Manjunath, Masahito Takehara, Anil Pai, Srinivas Rajendra, Toshiki Hisada, Ryo Fukuda, Naoya Tokiwa, Kazuaki Kawaguchi, Masashi Yamaoka, Hiromitsu Komai, Takatoshi Minamoto, Masaki Unno, Susumu Ozawa, Hiroshi Nakamura, Tomoo Hishida, Yasuyuki Kajitani, Lei Lin:
A 512Gb 3-bit/Cell 3D Flash Memory on 128-Wordline-Layer with 132MB/s Write Performance Featuring Circuit-Under-Array Technology. ISSCC 2019: 218-220 - 2012
- [j4]Koichi Fukuda, Yoshihisa Watanabe, Eiichi Makino, Koichi Kawakami, Jumpei Sato, Teruo Takagiwa, Naoaki Kanagawa, Hitoshi Shiga, Naoya Tokiwa, Yoshihiko Shindo, Takeshi Ogawa, Toshiaki Edahiro, Makoto Iwai, Osamu Nagao, Junji Musha, Takatoshi Minamoto, Yuka Furuta, Kosuke Yanagidaira, Yuya Suzuki, Dai Nakamura, Yoshikazu Hosomura, Rieko Tanaka, Hiromitsu Komai, Mai Muramoto, Go Shikata, Ayako Yuminaka, Kiyofumi Sakurai, Manabu Sakai, Hong Ding, Mitsuyuki Watanabe, Yosuke Kato, Toru Miwa, Alex Mak, Masaru Nakamichi, Gertjan Hemink, Dana Lee, Masaaki Higashitani, Brian Murphy, Bo Lei, Yasuhiko Matsunaga, Kiyomi Naruke, Takahiko Hara:
A 151-mm2 64-Gb 2 Bit/Cell NAND Flash Memory in 24-nm CMOS Technology. IEEE J. Solid State Circuits 47(1): 75-84 (2012) - 2011
- [c3]Koichi Fukuda, Yoshihisa Watanabe, Eiichi Makino, Koichi Kawakami, Jumpei Sato, Teruo Takagiwa, Naoaki Kanagawa, Hitoshi Shiga, Naoya Tokiwa, Yoshihiko Shindo, Toshiaki Edahiro, Takeshi Ogawa, Makoto Iwai, Osamu Nagao, Junji Musha, Takatoshi Minamoto, Kosuke Yanagidaira, Yuya Suzuki, Dai Nakamura, Yoshikazu Hosomura, Hiromitsu Komai, Yuka Furuta, Mai Muramoto, Rieko Tanaka, Go Shikata, Ayako Yuminaka, Kiyofumi Sakurai, Manabu Sakai, Hong Ding, Mitsuyuki Watanabe, Yosuke Kato, Toru Miwa, Alex Mak, Masaru Nakamichi, Gertjan Hemink, Dana Lee, Masaaki Higashitani, Brian Murphy, Bo Lei, Yasuhiko Matsunaga, Kiyomi Naruke, Takahiko Hara:
A 151mm2 64Gb MLC NAND flash memory in 24nm CMOS technology. ISSCC 2011: 198-199
2000 – 2009
- 2009
- [c2]Takuya Futatsuyama, Norihiro Fujita, Naoya Tokiwa, Yoshihiko Shindo, Toshiaki Edahiro, Teruhiko Kamei, Hiroaki Nasu, Makoto Iwai, Koji Kato, Yasuyuki Fukuda, Naoaki Kanagawa, Naofumi Abiko, Masahide Matsumoto, Toshihiko Himeno, Toshifumi Hashimoto, Yi-Ching Liu, Hardwell Chibvongodze, Takamitsu Hori, Manabu Sakai, Hong Ding, Yoshiharu Takeuchi, Hitoshi Shiga, Norifumi Kajimura, Yasuyuki Kajitani, Kiyofumi Sakurai, Kosuke Yanagidaira, Toshihiro Suzuki, Yuko Namiki, Tomofumi Fujimura, Man Mui, Hao Nguyen, Seungpil Lee, Alex Mak, Jeffery Lutze, Tooru Maruyama, Toshiharu Watanabe, Takahiko Hara, Shigeo Ohshima:
A 113mm2 32Gb 3b/cell NAND flash memory. ISSCC 2009: 242-243 - 2007
- [j3]Ken Takeuchi, Yasushi Kameda, Susumu Fujimura, Hiroyuki Otake, Koji Hosono, Hitoshi Shiga, Yoshihisa Watanabe, Takuya Futatsuyama, Yoshihiko Shindo, Masatsugu Kojima, Makoto Iwai, Masanobu Shirakawa, Masayuki Ichige, Kazuo Hatakeyama, Shinichi Tanaka, Teruhiko Kamei, Jia-Yi Fu, Adi Cernea, Yan Li, Masaaki Higashitani, Gertjan Hemink, Shinji Sato, Ken Oowada, Shih-Chung Lee, Naoki Hayashida, Jun Wan, Jeffrey Lutze, Shouchang Tsao, Mehrdad Mofidi, Kiyofumi Sakurai, Naoya Tokiwa, Hiroko Waki, Yasumitsu Nozawa, Kazuhisa Kanazawa, Shigeo Ohshima:
A 56-nm CMOS 99-mm2 8-Gb Multi-Level NAND Flash Memory With 10-MB/s Program Throughput. IEEE J. Solid State Circuits 42(1): 219-232 (2007) - 2006
- [j2]Takahiko Hara, Koichi Fukuda, Kazuhisa Kanazawa, Noboru Shibata, Koji Hosono, Hiroshi Maejima, Michio Nakagawa, Takumi Abe, Masatsugu Kojima, Masaki Fujiu, Yoshiaki Takeuchi, Kazumi Amemiya, Midori Morooka, Teruhiko Kamei, Hiroaki Nasu, Chi-Ming Wang, Kiyofumi Sakurai, Naoya Tokiwa, Hiroko Waki, Tohru Maruyama, Susumu Yoshikawa, Masaaki Higashitani, Tuan D. Pham, Yupin Fong, Toshiharu Watanabe:
A 146-mm2 8-gb multi-level NAND flash memory with 70-nm CMOS technology. IEEE J. Solid State Circuits 41(1): 161-169 (2006) - [c1]Ken Takeuchi, Yasushi Kameda, Susumu Fujimura, Hiroyuki Otake, Koji Hosono, Hitoshi Shiga, Yoshihisa Watanabe, Takuya Futatsuyama, Yoshihiko Shindo, Masatsugu Kojima, Makoto Iwai, Masanobu Shirakawa, Masayuki Ichige, Kazuo Hatakeyama, Shinichi Tanaka, Teruhiko Kamei, Jia-Yi Fu, Adi Cernea, Yan Li, Masaaki Higashitani, Gertjan Hemink, Shinji Sato, Ken Oowada, Shih-Chung Lee, Naoki Hayashida, Jun Wan, Jeffrey Lutze, Shouchang Tsao, Mehrdad Mofidi, Kiyofumi Sakurai, Naoya Tokiwa, Hiroko Waki, Yasumitsu Nozawa, Kazuhisa Kanazawa, Shigeo Ohshima:
A 56nm CMOS 99mm2 8Gb Multi-level NAND Flash Memory with 10MB/s Program Throughput. ISSCC 2006: 507-516 - 2002
- [j1]Toru Tanzawa
, Akira Umezawa, Tadayuki Taura, Hitoshi Shiga, Tokumasa Hara, Yoshinori Takano, Takeshi Miyaba, Naoya Tokiwa, Kentaro Watanabe, Hiroshi Watanabe, Kazunori Masuda, Kiyomi Naruke, Hideo Kato, Shigeru Atsumi:
A 44-mm2 four-bank eight-word page-read 64-Mb flash memory with flexible block redundancy and fast accurate word-line voltage controller. IEEE J. Solid State Circuits 37(11): 1485-1492 (2002)
Coauthor Index
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