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ORCIDGiorgio Baccarani
Person information
- affiliation: University of Bologna, Italy
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2010 – 2019
- 2018
[j21]Davide Cornigli
, Susanna Reggiani, Antonio Gnudi, Elena Gnani, Giorgio Baccarani, Davide Fabiani, Dhanoop Varghese, Enis Tuncer, S. Krishnan, Luu Nguyen:
Electrical characterization of epoxy-based molding compounds for next generation HV ICs in presence of moisture. Microelectron. Reliab. 88-90: 752-755 (2018)- [j20]Susanna Reggiani, Luigi Balestra, Antonio Gnudi, Elena Gnani, Giorgio Baccarani, J. Dobrzynska, J. Vobecký, C. Tosi:
TCAD study of DLC coatings for large-area high-power diodes. Microelectron. Reliab. 88-90: 1094-1097 (2018) - 2015
- [c17]Giorgio Baccarani, Emanuele Baravelli, Elena Gnani, Antonio Gnudi, Susanna Reggiani:
Theoretical analyses and modeling for nanoelectronics. ESSCIRC 2015: 4-9 - [c16]Giorgio Baccarani, Emanuele Baravelli, Elena Gnani, Antonio Gnudi, Susanna Reggiani:
Theoretical analyses and modeling for nanoelectronics. ESSDERC 2015: 4-9 - 2014
- [c15]Federica Villani, Elena Gnani, Antonio Gnudi, Susanna Reggiani, Giorgio Baccarani:
A quasi 2D semianalytical model for the potential profile in hetero and homojunction tunnel FETs. ESSDERC 2014: 262-265 - [c14]Valerio Di Lecce, Roberto Grassi, Antonio Gnudi, Elena Gnani, Susanna Reggiani, Giorgio Baccarani:
Impact of crystallographic orientation and impurity scattering in Graphene-Base Heterojunction Transistors for Terahertz Operation. ESSDERC 2014: 313-316 - [c13]Ilaria Imperiale, Susanna Reggiani, Elena Gnani, Antonio Gnudi, Giorgio Baccarani, Luu Nguyen, Marie Denison:
TCAD modeling of encapsulation layer in high-voltage, high-temperature operation regime. ESSDERC 2014: 325-328 - [c12]Federico Monti, Susanna Reggiani, Gaetano Barone, Elena Gnani, Antonio Gnudi, Giorgio Baccarani, Stefano Poli, Ming-Yeh Chuang, Weidong Tian, Dhanoop Varghese, Rick Wise:
TCAD analysis of HCS degradation in LDMOS devices under AC stress conditions. ESSDERC 2014: 333-336 - 2013
- [j19]Elena Gnani, Antonio Gnudi, Susanna Reggiani, Giorgio Baccarani:
Deterministic solution of the 1D Boltzmann transport equation: Application to the study of current transport in nanowire FETs. Microelectron. J. 44(1): 20-25 (2013) - [c11]Emanuele Baravelli, Elena Gnani, Roberto Grassi, Antonio Gnudi, Susanna Reggiani, Giorgio Baccarani:
Complementary n- and p-type TFETs on the same InAs/Al0.05Ga0.95Sb platform. ESSDERC 2013: 69-72 - [c10]Giovanni Betti Beneventi, Elena Gnani, Antonio Gnudi, Susanna Reggiani, Giorgio Baccarani:
Boosting InAs TFET on-current above 1 mA/μm with no leakage penalty. ESSDERC 2013: 73-76 - [c9]Pasquale Maiorano, Elena Gnani, Antonio Gnudi, Susanna Reggiani, Giorgio Baccarani:
Gate stack optimization to minimize power consumption in super-lattice fets. ESSDERC 2013: 81-84 - [c8]Susanna Reggiani, Elena Gnani, Antonio Gnudi, Giorgio Baccarani, Stefano Poli, Rick Wise, Ming-Yeh Chuang, Weidong Tian, Marie Denison:
Modeling and characterization of hot-carrier stress degradation in power MOSFETs (invited). ESSDERC 2013: 91-94 - [c7]Valerio Di Lecce, Roberto Grassi, Antonio Gnudi, Elena Gnani, Susanna Reggiani, Giorgio Baccarani:
DC and small-signal numerical simulation of graphene base transistor for terahertz operation. ESSDERC 2013: 314-317 - 2012
- [c6]Elena Gnani, Susanna Reggiani, Antonio Gnudi, Giorgio Baccarani:
Drain-conductance optimization in nanowire TFETs. ESSDERC 2012: 105-108
2000 – 2009
- 2003
- [c5]Alessandro Bevilacqua, Alessandro Lanza, Giorgio Baccarani, Riccardo Rovatti:
A Single-Scan Algorithm for Connected Components Labelling in a Traffic Monitoring Application. SCIA 2003: 677-684 - 2000
- [j18]Susanna Reggiani, Marina Valdinoci, Luigi Colalongo, Massimo Rudan, Giorgio Baccarani:
An Analytical, Temperature-dependent Model for Majority- and Minority-carrier Mobility in Silicon Devices. VLSI Design 10(4): 467-483 (2000)
1990 – 1999
- 1998
- [j17]Eleonora Franchi, Nicolò Manaresi, Riccardo Rovatti, Alberto Bellini, Giorgio Baccarani:
Analog synthesis of nonlinear functions based on fuzzy logic. IEEE J. Solid State Circuits 33(6): 885-895 (1998) - [j16]Giorgio Baccarani, Massimo Rudan, M. Lorenzini, C. Sala:
Recent Advances in Device Simulation Using Standard Transport Models. VLSI Design 6(1-4): 223-237 (1998) - 1996
- [j15]Alberto Ferrari, Antonella Bellettini, Roberto Guerrieri, Giorgio Baccarani:
An ASIC chip set for parallel fuzzy database mining. IEEE Micro 16(6): 60-67 (1996) - [j14]Nicolò Manaresi, Riccardo Rovatti, Eleonora Franchi, Roberto Guerrieri, Giorgio Baccarani:
A silicon compiler of analog fuzzy controllers: from behavioral specifications to layout. IEEE Trans. Fuzzy Syst. 4(4): 418-428 (1996) - [j13]Marco Tartagni, Eleonora Franchi, Roberto Guerrieri, Giorgio Baccarani:
A photodiode cell for applications to position and motion estimation sensors. IEEE Trans. Ind. Electron. 43(1): 200-206 (1996) - [j12]Nicolò Manaresi, Riccardo Rovatti, Eleonora Franchi, Roberto Guerrieri, Giorgio Baccarani:
Automatic synthesis of analog fuzzy controllers: a hardware and software approach. IEEE Trans. Ind. Electron. 43(1): 217-225 (1996) - [j11]Nicola Guglielmi, Roberto Guerrieri, Giorgio Baccarani:
Highly constrained neural networks for industrial quality control. IEEE Trans. Neural Networks 7(1): 206-213 (1996) - [c4]Giorgio Baccarani, Massimo Rudan, M. Lorenzini, Wolfgang Fichtner, J. Litsios, A. Schenk, P. Van Staa, L. Kaeser, A. Kampmann, A. Marmiroli, C. Sala, E. Ravanelli:
Device simulation for smart integrated systems (DESSIS). ICECS 1996: 752-755 - 1995
- [j10]Riccardo Rovatti, Roberto Guerrieri, Giorgio Baccarani:
An enhanced two-level Boolean synthesis methodology for fuzzy rules minimization. IEEE Trans. Fuzzy Syst. 3(3): 288-299 (1995) - [j9]Massimo Rudan, Giorgio Baccarani:
On the Structure and Closure-Condition of the Hydrodynamic Model. VLSI Design 3(2): 115-129 (1995) - [c3]E. Scopa, Alberto Leone, Roberto Guerrieri, Giorgio Baccarani:
A 2D-DCT low-power architecture for H.261 coders. ICASSP 1995: 3271-3274 - 1994
- [j8]Alberto Leone, Antonio Gnudi, Giorgio Baccarani:
Hydrodynamic simulation of semiconductor devices operating at low temperature. IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. 13(11): 1400-1408 (1994) - 1993
- [j7]Antonio Gnudi, Davide Ventura, Giorgio Baccarani:
Modeling impact ionization in a BJT by means of spherical harmonics expansion of the Boltzmann transport equation. IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. 12(11): 1706-1713 (1993) - [c2]Antonella Bellettini, Alberto Ferrari, Roberto Guerrieri, Giorgio Baccarani:
An array-processor based architecture for classification problems. ASAP 1993: 148-151 - 1992
- [j6]Wai Lee, Steven E. Laux, Massimo V. Fischetti, Giorgio Baccarani, Antonio Gnudi, Johannes M. C. (Hans) Stork, Jack A. Mandelman, Emmanuel F. Crabbé, Matthew R. Wordeman, Farouk Odeh:
Numerical modeling of advanced semiconductor devices. IBM J. Res. Dev. 36(2): 208-232 (1992) - [c1]Zsolt Miklós Kovács-Vajna, Roberto Guerrieri, Giorgio Baccarani:
A novel metric for nearest-neighbor classification of hand-written digits. ICPR (2) 1992: 96-100 - 1991
- [j5]Paolo Ciampolini, Anna Pierantoni, Giorgio Baccarani:
Efficient 3-D simulation of complex structures. IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. 10(9): 1141-1149 (1991) - 1990
- [j4]Paolo Ciampolini, Anna Pierantoni, Massimo Rudan, Giorgio Baccarani:
Three-dimensional simulation of VLSI structures. Eur. Trans. Telecommun. 1(3): 301-306 (1990)
1980 – 1989
- 1989
- [j3]Paolo Ciampolini, Alessandro Forghieri, Anna Pierantoni, Antonio Gnudi, Massimo Rudan, Giorgio Baccarani:
Adaptive mesh generation preserving the quality of the initial grid. IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. 8(5): 490-500 (1989) - 1988
- [j2]Alessandro Forghieri, Roberto Guerrieri, Paolo Ciampolini, Antonio Gnudi, Massimo Rudan, Giorgio Baccarani:
A new discretization strategy of the semiconductor equations comprising momentum and energy balance. IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. 7(2): 231-242 (1988) - 1987
- [j1]Antonio Gnudi, Paolo Ciampolini, Roberto Guerrieri, Massimo Rudan, Giorgio Baccarani:
Sensitivity Analysis for Device Design. IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. 6(5): 879-885 (1987)
Coauthor Index
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