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ORCIDShinji Miyamoto
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2010 – 2019
- 2013
[c5]Chikaaki Kodama
, Hirotaka Ichikawa, Koichi Nakayama, Toshiya Kotani, Shigeki Nojima, Shoji Mimotogi, Shinji Miyamoto, Atsushi Takahashi:
Self-Aligned Double and Quadruple Patterning-aware grid routing with hotspots control. ASP-DAC 2013: 267-272- 2011
- [j2]Koichi Ishida, Tadashi Yasufuku, Shinji Miyamoto, Hiroto Nakai, Makoto Takamiya, Takayasu Sakurai, Ken Takeuchi:
1.8 V Low-Transient-Energy Adaptive Program-Voltage Generator Based on Boost Converter for 3D-Integrated NAND Flash SSD. IEEE J. Solid State Circuits 46(6): 1478-1487 (2011) - 2010
- [j1]Tadashi Yasufuku, Koichi Ishida, Shinji Miyamoto, Hiroto Nakai, Makoto Takamiya, Takayasu Sakurai, Ken Takeuchi:
Inductor and TSV Design of 20-V Boost Converter for Low Power 3D Solid State Drive with NAND Flash Memories. IEICE Trans. Electron. 93-C(3): 317-323 (2010)
2000 – 2009
- 2009
- [c4]Tadashi Yasufuku, Koichi Ishida, Shinji Miyamoto, Hiroto Nakai, Makoto Takamiya, Takayasu Sakurai, Ken Takeuchi:
Effect of resistance of TSV's on performance of boost converter for low power 3D SSD with NAND flash memories. 3DIC 2009: 1-4 - [c3]Tadashi Yasufuku, Koichi Ishida, Shinji Miyamoto, Hiroto Nakai, Makoto Takamiya, Takayasu Sakurai, Ken Takeuchi:
Inductor design of 20-V boost converter for low power 3D solid state drive with NAND flash memories. ISLPED 2009: 87-92 - [c2]Koichi Ishida, Tadashi Yasufuku, Shinji Miyamoto, Hiroto Nakai, Makoto Takamiya, Takayasu Sakurai, Ken Takeuchi:
A 1.8V 30nJ adaptive program-voltage (20V) generator for 3D-integrated NAND flash SSD. ISSCC 2009: 238-239 - 2008
- [c1]Kazushige Kanda, Masaru Koyanagi, Toshio Yamamura, Koji Hosono, Masahiro Yoshihara, Toru Miwa, Yosuke Kato, Alex Mak, Siu Lung Chan, Frank Tsai, Raul Cernea, Binh Le, Eiichi Makino, Takashi Taira, Hiroyuki Otake, Norifumi Kajimura, Susumu Fujimura, Yoshiaki Takeuchi, Mikihiko Itoh, Masanobu Shirakawa, Dai Nakamura, Yuya Suzuki, Yuki Okukawa, Masatsugu Kojima, Kazuhide Yoneya, Takamichi Arizono, Toshiki Hisada, Shinji Miyamoto, Mitsuhiro Noguchi, Toshitake Yaegashi, Masaaki Higashitani, Fumitoshi Ito, Teruhiko Kamei, Gertjan Hemink, Tooru Maruyama, Kazumi Ino, Shigeo Ohshima:
A 120mm2 16Gb 4-MLC NAND Flash Memory with 43nm CMOS Technology. ISSCC 2008: 430-431
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