"A 120mm² 16Gb 4-MLC NAND Flash Memory with 43nm CMOS Technology."

Kazushige Kanda et al. (2008)

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DOI: 10.1109/ISSCC.2008.4523241

access: closed

type: Conference or Workshop Paper

metadata version: 2017-05-17

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  - conf/isscc/KandaKYHYMKMCTCLMTOKFTISNSOKYAHMNYHIKHMIO08
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  - https://dblp.org/rec/conf/isscc/KandaKYHYMKMCTCLMTOKFTISNSOKYAHMNYHIKHMIO08
Kazushige Kanda, Masaru Koyanagi, Toshio Yamamura, Koji Hosono, Masahiro Yoshihara, Toru Miwa, Yosuke Kato, Alex Mak, Siu Lung Chan, Frank Tsai, Raul Cernea, Binh Le, Eiichi Makino, Takashi Taira, Hiroyuki Otake, Norifumi Kajimura, Susumu Fujimura, Yoshiaki Takeuchi, Mikihiko Itoh, Masanobu Shirakawa, Dai Nakamura, Yuya Suzuki, Yuki Okukawa, Masatsugu Kojima, Kazuhide Yoneya, Takamichi Arizono, Toshiki Hisada, Shinji Miyamoto, Mitsuhiro Noguchi, Toshitake Yaegashi, Masaaki Higashitani, Fumitoshi Ito, Teruhiko Kamei, Gertjan Hemink, Tooru Maruyama, Kazumi Ino, Shigeo Ohshima:
A 120mm² 16Gb 4-MLC NAND Flash Memory with 43nm CMOS Technology. ISSCC 2008: 430-431

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