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Journal Articles

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2008
[j4]
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D. Pic, Didier Goguenheim, Jean-Luc Ogier:
Assessment of temperature and voltage accelerating factors for 2.3-3.2 nm SiO₂ thin oxides stressed to hard breakdown. Microelectron. Reliab. 48(3): 335-341 (2008)
[j3]
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D. Pic, Arnaud Régnier, V. Pean, Jean-Luc Ogier, Didier Goguenheim:
Dynamic stress method for accurate NVM oxide robustness evaluation for automotive applications. Microelectron. Reliab. 48(8-9): 1318-1321 (2008)
2007
[j2]
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Didier Goguenheim, D. Pic, Jean-Luc Ogier:
Oxide reliability below 3 nm for advanced CMOS: Issues, characterization, and solutions. Microelectron. Reliab. 47(9-11): 1322-1329 (2007)
[j1]
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D. Pic, Didier Goguenheim, Jean-Luc Ogier:
A comprehensive study of stress induced leakage current using a floating gate structure for direct applications in EEPROM memories. Microelectron. Reliab. 47(9-11): 1373-1377 (2007)

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