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ORCIDChadwin D. Young
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2020 – today
- 2024
[c5]Rodolfo A. Rodriguez-Davila, L. Fernandez-Izquierdo, J. Fink, T. Moise, Robert C. Baumann, B. Gnade, Manuel Quevedo-Lopez, Chadwin D. Young
:
Reliability Assessment of a-IGZO and ZnO Thin Film Transistors (TFTs) to X-ray irradiation. IRPS 2024: 1-6- 2020
- [c4]Rodolfo A. Rodriguez-Davila, Richard A. Chapman, Massimo Catalano, Manuel Quevedo-Lopez, Chadwin D. Young:
Enhanced Threshold Voltage Stability in ZnO Thin-Film-Transistors by Excess of Oxygen in Atomic Layer Deposited Al2O3. IRPS 2020: 1-5
2010 – 2019
- 2019
- [c3]Pavel Bolshakov, Rodolfo A. Rodriguez-Davila, Manuel Quevedo-Lopez, Chadwin D. Young:
Positive Bias Instability in ZnO TFTs with Al2O3 Gate Dielectric. IRPS 2019: 1-5 - 2018
- [c2]Chadwin D. Young, Pavel Bolshakov, Rodolfo A. Rodriguez-Davila, Peng Zhao, Ava Khosravi, Israel Mejia, Manuel Quevedo-Lopez, Christopher L. Hinkle, Robert M. Wallace:
Electrical characterization of process induced effects on non-silicon devices. ICICDT 2018: 173-176 - 2017
- [c1]Patrick Ponath, Agham B. Posadas, Yuan Ren, Xiaoyu Wu, Keji Lai, Alex Demkov, Michael Schmidt, Ray Duffy, Paul K. Hurley, Jian Wang, Chadwin D. Young, Rama K. Vasudevan, M. Baris Okatan, Stephen Jesse, Sergei V. Kalinin:
Advances of the development of a ferroelectric field-effect transistor on Ge(001). ICICDT 2017: 1-3 - 2016
- [j7]Nebojsa D. Jankovic, Chadwin D. Young:
Experimental Evaluation of Circuit-Based Modeling of the NBTI Effects in Double-Gate FinFETs. Microelectron. Reliab. 59: 26-29 (2016) - 2015
- [j6]Mohamed T. Ghoneim, Jhonathan P. Rojas, Chadwin D. Young, Gennadi Bersuker, Muhammad Mustafa Hussain:
Electrical Analysis of High Dielectric Constant Insulator and Metal Gate Metal Oxide Semiconductor Capacitors on Flexible Bulk Mono-Crystalline Silicon. IEEE Trans. Reliab. 64(2): 579-585 (2015)
2000 – 2009
- 2009
- [j5]N. A. Chowdhury, X. Wang, Gennadi Bersuker, Chadwin D. Young, N. Rahim, Durga Misra:
Temperature dependent time-to-breakdown (TBD) of TiN/HfO2 n-channel MOS devices in inversion. Microelectron. Reliab. 49(5): 495-498 (2009) - 2008
- [j4]R. Pagano, Salvatore Lombardo, Felix Palumbo, Paul Kirsch, S. A. Krishnan, Chadwin D. Young, Rino Choi, Gennadi Bersuker, James H. Stathis:
A novel approach to characterization of progressive breakdown in high-k/metal gate stacks. Microelectron. Reliab. 48(11-12): 1759-1764 (2008) - 2007
- [j3]Chadwin D. Young, Dawei Heh, Arnost Neugroschel, Rino Choi, Byoung Hun Lee, Gennadi Bersuker:
Electrical characterization and analysis techniques for the high-kappa era. Microelectron. Reliab. 47(4-5): 479-488 (2007) - 2005
- [j2]Chadwin D. Young, Gennadi Bersuker, Yuegang Zhao, Jeff J. Peterson, Joel Barnett, George A. Brown, Jang H. Sim, Rino Choi, Byoung Hun Lee, Peter Zeitzoff:
Probing stress effects in HfO2 gate stacks with time dependent measurements. Microelectron. Reliab. 45(5-6): 806-810 (2005) - 2004
- [j1]Gennadi Bersuker, Jang H. Sim, Chadwin D. Young, Rino Choi, Peter Zeitzoff, George A. Brown, Byoung Hun Lee, Robert W. Murto:
Effect of Pre-Existing Defects on Reliability Assessment of High-K Gate Dielectrics. Microelectron. Reliab. 44(9-11): 1509-1512 (2004)
Coauthor Index
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