"Positive Bias Instability in ZnO TFTs with Al2O3 Gate Dielectric."

Pavel Bolshakov et al. (2019)

Details and statistics

DOI: 10.1109/IRPS.2019.8720547

access: closed

type: Conference or Workshop Paper

metadata version: 2019-10-19

manage site settings

To protect your privacy, all features that rely on external API calls from your browser are turned off by default. You need to opt-in for them to become active. All settings here will be stored as cookies with your web browser. For more information see our F.A.Q.