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Damien Croain
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Conference and Workshop Papers
- 2017
- [c7]Kedar Janardan Dhori, Hitesh Chawla, Ashish Kumar, Prashant Pandey, Promod Kumar, Lorenzo Ciampolini, Florian Cacho, Damien Croain:
High-yield design of high-density SRAM for low-voltage and low-leakage operations. DFT 2017: 1-6 - 2016
- [c6]Martin Cochet, Sylvain Clerc, Mehdi Naceur, Pierre Schamberger, Damien Croain, Jean-Luc Autran, Philippe Roche:
A 28nm FD-SOI standard cell 0.6-1.2V open-loop frequency multiplier for low power SoC clocking. ISCAS 2016: 1206-1209 - [c5]Rossella Ranica, Nicolas Planes, Vincent Huard, Olivier Weber, Daniel Noblet, Damien Croain, Fabien Giner, Sylvie Naudet, P. Mergault, S. Ibars, A. Villaret, Maryline Parra, Sébastien Haendler, M. Quoirin, Florian Cacho, C. Julien, F. Terrier, Lorenzo Ciampolini, David Turgis, Christophe Lecocq, Franck Arnaud:
28nm FDSOI technology sub-0.6V SRAM Vmin assessment for ultra low voltage applications. VLSI Circuits 2016: 1-2 - 2015
- [c4]Fady Abouzeid, Sylvain Clerc, Cyril Bottoni, Benjamin Coeffic, Jean-Marc Daveau, Damien Croain, Gilles Gasiot, Dimitri Soussan, Philippe Roche:
28nm FD-SOI technology and design platform for sub-10pJ/cycle and SER-immune 32bits processors. ESSCIRC 2015: 108-111 - [c3]Sylvain Clerc, Mehdi Saligane, Fady Abouzeid, Martin Cochet, Jean-Marc Daveau, Cyril Bottoni, David Bol, Julien De Vos, Dominique Zamora, Benjamin Coeffic, Dimitri Soussan, Damien Croain, Mehdi Naceur, Pierre Schamberger, Philippe Roche, Dennis Sylvester:
8.4 A 0.33V/-40°C process/temperature closed-loop compensation SoC embedding all-digital clock multiplier and DC-DC converter exploiting FDSOI 28nm back-gate biasing. ISSCC 2015: 1-3 - 2011
- [c2]N. Ruiz Amador, Vincent Huard, E. Pion, Florian Cacho, Damien Croain, V. Robert, Sylvain Engels, Philippe Flatresse, Lorena Anghel:
Bottom-up digital system-level reliability modeling. CICC 2011: 1-4 - [c1]Julien Le Coz, Philippe Flatresse, Sylvain Engels, Alexandre Valentian, Marc Belleville, Christine Raynaud, Damien Croain, Pascal Urard:
Comparison of 65nm LP bulk and LP PD-SOI with adaptive power gate body bias for an LDPC codec. ISSCC 2011: 336-337
Coauthor Index
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