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Journal Articles
- 2010
[j1]Uksong Kang, Hoeju Chung, Seongmoo Heo, Dukha Park, Hoon Lee, Jin Ho Kim, Soon-Hong Ahn, Sooho Cha, Jaesung Ahn, Dukmin Kwon, Jaewook Lee, Han-Sung Joo, Woo-Seop Kim, Dong Hyeon Jang, Nam-Seog Kim, Jung-Hwan Choi, Tae-Gyeong Chung, Jei-Hwan Yoo, Joo-Sun Choi, Changhyun Kim, Young-Hyun Jun:
8 Gb 3-D DDR3 DRAM Using Through-Silicon-Via Technology. IEEE J. Solid State Circuits 45(1): 111-119 (2010)
Conference and Workshop Papers
- 2015
- [c3]Hyun-Jin Kim, Jeong-Don Lim, Jang-Woo Lee, Dae-Hoon Na
, Joon-Ho Shin, Chae-Hoon Kim, Seungwoo Yu, Ji-Yeon Shin, Seon-Kyoo Lee, Devraj Rajagopal, Sang-Tae Kim, Kyeong-Tae Kang, Jeong-Joon Park, Yongjin Kwon, Min-Jae Lee, Sunghoon Kim, Seunghoon Shin, Hyunggon Kim, Jin-Tae Kim, Ki-Sung Kim, Han-Sung Joo, Chanjin Park, Jae-Hwan Kim, Man-Joong Lee, Do-Kook Kim, Hyang-Ja Yang, Dae-Seok Byeon, Ki-Tae Park, Kyehyun Kyung, Jeong-Hyuk Choi:
7.6 1GB/s 2Tb NAND flash multi-chip package with frequency-boosting interface chip. ISSCC 2015: 1-3 - 2012
- [c2]Youngdon Choi, Ickhyun Song, Mu-Hui Park, Hoeju Chung, Sanghoan Chang, Beakhyoung Cho, Jinyoung Kim, Younghoon Oh, Dukmin Kwon, Jung Sunwoo, Junho Shin, Yoohwan Rho, Changsoo Lee, Min Gu Kang, Jaeyun Lee, Yongjin Kwon, Soehee Kim, Jaewhan Kim, Yong-jun Lee, Qi Wang, Sooho Cha, Sujin Ahn, Hideki Horii, Jaewook Lee, KiSeung Kim, Han-Sung Joo, KwangJin Lee, Yeong-Taek Lee, Jei-Hwan Yoo, Gitae Jeong:
A 20nm 1.8V 8Gb PRAM with 40MB/s program bandwidth. ISSCC 2012: 46-48 - 2009
- [c1]Uksong Kang, Hoeju Chung, Seongmoo Heo, Soon-Hong Ahn, Hoon Lee, Sooho Cha, Jaesung Ahn, Dukmin Kwon, Jin Ho Kim, Jaewook Lee, Han-Sung Joo, Woo-Seop Kim, Hyun-Kyung Kim, Eun-Mi Lee, So-Ra Kim, Keum-Hee Ma, Dong-Hyun Jang, Nam-Seog Kim, Man-Sik Choi, Sae-Jang Oh, Jung-Bae Lee, Tae-Kyung Jung, Jei-Hwan Yoo, Changhyun Kim:
8Gb 3D DDR3 DRAM using through-silicon-via technology. ISSCC 2009: 130-131
Coauthor Index
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