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2010 – 2019
- 2012
[c4]Youngdon Choi, Ickhyun Song
, Mu-Hui Park, Hoeju Chung, Sanghoan Chang, Beakhyoung Cho, Jinyoung Kim, Younghoon Oh, Dukmin Kwon, Jung Sunwoo, Junho Shin, Yoohwan Rho, Changsoo Lee, Min Gu Kang, Jaeyun Lee, Yongjin Kwon, Soehee Kim, Jaewhan Kim, Yong-jun Lee, Qi Wang, Sooho Cha, Sujin Ahn, Hideki Horii, Jaewook Lee, KiSeung Kim, Han-Sung Joo, KwangJin Lee, Yeong-Taek Lee, Jei-Hwan Yoo, Gitae Jeong:
A 20nm 1.8V 8Gb PRAM with 40MB/s program bandwidth. ISSCC 2012: 46-48- 2011
- [c3]Hoeju Chung, Byung-Hoon Jeong, ByungJun Min, Youngdon Choi, Beak-Hyung Cho, Junho Shin, Jinyoung Kim, Jung Sunwoo, Joon-min Park, Qi Wang, Yong-jun Lee, Sooho Cha, Dukmin Kwon, Sang-Tae Kim, Sunghoon Kim, Yoohwan Rho, Mu-Hui Park, Jaewhan Kim, Ickhyun Song, Sunghyun Jun, Jaewook Lee, KiSeung Kim, Ki-won Lim, Won-ryul Chung, ChangHan Choi, HoGeun Cho, Inchul Shin, Woochul Jun, Seokwon Hwang, Ki-Whan Song, KwangJin Lee, Sang-whan Chang, Woo-Yeong Cho, Jei-Hwan Yoo, Young-Hyun Jun:
A 58nm 1.8V 1Gb PRAM with 6.4MB/s program BW. ISSCC 2011: 500-502
2000 – 2009
- 2008
- [j2]KwangJin Lee, Beak-Hyung Cho, Woo-Yeong Cho, Sangbeom Kang, Byung-Gil Choi, Hyung-Rok Oh, Changsoo Lee, Hye-Jin Kim, Joon-min Park, Qi Wang, Mu-Hui Park, Yu-Hwan Ro, Joon-Yong Choi, Ki-Sung Kim, Young-Ran Kim, In-Cheol Shin, Ki-won Lim, Ho-Keun Cho, ChangHan Choi, Won-ryul Chung, Du-Eung Kim, Yong-Jin Yoon, Kwang-Suk Yu, Gi-Tae Jeong, Hong-Sik Jeong, Choong-Keun Kwak, Chang-Hyun Kim, Kinam Kim:
A 90 nm 1.8 V 512 Mb Diode-Switch PRAM With 266 MB/s Read Throughput. IEEE J. Solid State Circuits 43(1): 150-162 (2008) - 2007
- [j1]Sangbeom Kang, Woo Yeong Cho, Beak-Hyung Cho, KwangJin Lee, Changsoo Lee, Hyung-Rok Oh, Byung-Gil Choi, Qi Wang, Hye-Jin Kim, Mu-Hui Park, Yu-Hwan Ro, Suyeon Kim, Choong-Duk Ha, Ki-Sung Kim, Young-Ran Kim, Du-Eung Kim, Choong-Keun Kwak, Hyun-Geun Byun, Gitae Jeong, Hong-Sik Jeong, Kinam Kim, YunSueng Shin:
A 0.1-µm 1.8-V 256-Mb Phase-Change Random Access Memory (PRAM) With 66-MHz Synchronous Burst-Read Operation. IEEE J. Solid State Circuits 42(1): 210-218 (2007) - [c2]KwangJin Lee, Beak-Hyung Cho, Woo-Yeong Cho, Sangbeom Kang, Byung-Gil Choi, Hyung-Rok Oh, Changsoo Lee, Hye-Jin Kim, Joon-min Park, Qi Wang, Mu-Hui Park, Yu-Hwan Ro, Joon-Yong Choi, Ki-Sung Kim, Young-Ran Kim, In-Cheol Shin, Ki-won Lim, Ho-Keun Cho, ChangHan Choi, Won-ryul Chung, Du-Eung Kim, Kwang-Suk Yu, Gitae Jeong, Hongsik Jeong, Choong-Keun Kwak, Chang-Hyun Kim, Kinam Kim:
A 90nm 1.8V 512Mb Diode-Switch PRAM with 266MB/s Read Throughput. ISSCC 2007: 472-616 - 2006
- [c1]Sangbeom Kang, WooYeong Cho, Beak-Hyung Cho, Kwangjin Lee, Changsoo Lee, Hyung-Rok Oh, Byung-Gil Choi, Qi Wang, Hye-Jin Kim, Mu-Hui Park, Yu-Hwan Ro, Suyeon Kim, Du-Eung Kim, Kang-Sik Cho, Choong-Duk Ha, Young-Ran Kim, Ki-Sung Kim, Choong-Ryeol Hwang, Choong-Keun Kwak, Hyun-Geun Byun, YunSueng Shin:
A 0.1µm 1.8V 256Mb 66MHz Synchronous Burst PRAM. ISSCC 2006: 487-496
Coauthor Index
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