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ORCIDMichael L. Alles
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- affiliation: Vanderbilt University, Nashville, TN, USA
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2020 – today
- 2024
[c5]En Xia Zhang
, Shintaro Toguchi, Zi Xiang Guo, Michael L. Alles, Ronald D. Schrimpf, Daniel M. Fleetwood:
Charge Trapping in Irradiated 3D Devices and ICs (Invited). IRPS 2024: 10- 2021
- [c4]Peng Wang, En-xia Zhang, Daniel M. Fleetwood, Peng Fei Wang, Michael W. McCurdy, Ji-Tzouh Lin, Michael L. Alles, Jim L. Davidson, Bruce W. Alphenaar, Ronald D. Schrimpf:
Effects of Charge Generation and Trapping on the X-ray Response of Strained AlGaN/GaN HEMTs. ASICON 2021: 1-4
2010 – 2019
- 2019
- [c3]M. L. Breeding, Robert A. Reed, K. M. Warren, Michael L. Alles:
Exploration of the Impact of Physical Integration Schemes on Soft Errors in 3D ICs Using Monte Carlo Simulation. IRPS 2019: 1-7 - 2015
- [c2]N. Tam, Bharat L. Bhuva, Lloyd W. Massengill, Dennis R. Ball, Michael W. McCurdy, Michael L. Alles, Indranil Chatterjee:
Multi-cell soft errors at the 16-nm FinFET technology node. IRPS 2015: 4 - 2014
- [j4]Cher Xuan Zhang, En-xia Zhang, Daniel M. Fleetwood, Michael L. Alles, Ronald D. Schrimpf, Chris Rutherglen, Kosmas Galatsis:
Total-ionizing-dose effects and reliability of carbon nanotube FET devices. Microelectron. Reliab. 54(11): 2355-2359 (2014) - 2012
- [j3]Nadia Rezzak, Pierre Maillard, Ronald D. Schrimpf, Michael L. Alles, Daniel M. Fleetwood, Yanfeng Albert Li:
The impact of device width on the variability of post-irradiation leakage currents in 90 and 65 nm CMOS technologies. Microelectron. Reliab. 52(11): 2521-2526 (2012) - 2011
- [j2]Nadia Rezzak, Michael L. Alles, Ronald D. Schrimpf, Sarah Kalemeris, Lloyd W. Massengill, John Sochacki, Hugh J. Barnaby:
The sensitivity of radiation-induced leakage to STI topology and sidewall doping. Microelectron. Reliab. 51(5): 889-894 (2011)
2000 – 2009
- 2008
- [j1]Alexander I. Fedoseyev, Marek Turowski, Michael L. Alles, Robert A. Weller:
Accurate numerical models for simulation of radiation events in nano-scale semiconductor devices. Math. Comput. Simul. 79(4): 1086-1095 (2008) - [c1]Alexander I. Fedoseyev, Marek Turowski, Ashok Raman, Michael L. Alles, Robert A. Weller:
Multiscale Numerical Models for Simulation of Radiation Events in Semiconductor Devices. ICCS (2) 2008: 281-290
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