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ORCIDTetsuzo Ueda
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2010 – 2019
- 2019
[c6]Eric E. Fabris, Matteo Meneghini, Carlo De Santi
, Matteo Borga, Gaudenzio Meneghesso, Enrico Zanoni, Y. Kinoshita, Kenichiro Tanaka, H. Ishida, Tetsuzo Ueda:
Hot-Electron Effects in GaN GITs and HD-GITs: A Comprehensive Analysis. IRPS 2019: 1-6- [c5]Kenichiro Tanaka, Masahiro Hikita, Tetsuzo Ueda:
Influence of Donor-Type Hole Traps Under P-GaN Gate in GaN-Based Gate Injection Transistor (GIT). IRPS 2019: 1-4 - 2018
- [c4]Ayanori Ikoshi, Masahiro Toki, Hiroto Yamagiwa, Daijiro Arisawa, Masahiro Hikita, Kazuki Suzuki, Manabu Yanagihara, Yasuhiro Uemoto, Kenichiro Tanaka, Tetsuzo Ueda:
Lifetime evaluation for Hybrid-Drain-embedded Gate Injection Transistor (HD-GIT) under practical switching operations. IRPS 2018: 4 - 2016
- [j5]Osamu Kusumoto, Atsushi Ohoka, Nobuyuki Horikawa, Kohtaro Tanaka, Masahiko Niwayama, Masao Uchida, Yoshihiko Kanzawa, Kazuyuki Sawada, Tetsuzo Ueda:
Reliability of Diode-Integrated SiC Power MOSFET(DioMOS). Microelectron. Reliab. 58: 158-163 (2016) - [c3]Shinji Ujita, Yusuke Kinoshita, Hidekazu Umeda, Tatsuo Morita, Kazuhiro Kaibara, Satoshi Tamura, Masahiro Ishida, Tetsuzo Ueda:
A fully integrated GaN-based power IC including gate drivers for high-efficiency DC-DC Converters. VLSI Circuits 2016: 1-2 - 2015
- [j4]Takaaki Ibuchi, Tsuyoshi Funaki, Shinji Ujita, Masahiro Ishida, Tetsuzo Ueda:
Conducted noise of GaN Schottky barrier diode in a DC-DC converter. IEICE Electron. Express 12(24): 20150912 (2015) - 2012
- [j3]Noboru Negoro, Masayuki Kuroda, Tomohiro Murata, Masaaki Nishijima, Yoshiharu Anda, Hiroyuki Sakai, Tetsuzo Ueda, Tsuyoshi Tanaka:
K-Band AlGaN/GaN MIS-HFET on Si with High Output Power over 10 W. IEICE Trans. Electron. 95-C(8): 1327-1331 (2012) - [c2]Shuichi Nagai, Noboru Negoro, Takeshi Fukuda, Nobuyuki Otsuka, Hiroyuki Sakai, Tetsuzo Ueda, Tsuyoshi Tanaka, Daisuke Ueda:
A DC-isolated gate drive IC with drive-by-microwave technology for power switching devices. ISSCC 2012: 404-406 - 2011
- [c1]Tetsuzo Ueda, Tsuyoshi Tanaka, Daisuke Ueda:
Current status on GaN-based RF-power devices. ESSCIRC 2011: 61-66
2000 – 2009
- 2008
- [j2]Shun Sugiura, Shigeru Kishimoto, Takashi Mizutani, Masayuki Kuroda, Tetsuzo Ueda, Tsuyoshi Tanaka:
Enhancement-Mode n-Channel GaN MOSFETs Using HfO2 as a Gate Oxide. IEICE Trans. Electron. 91-C(7): 1001-1003 (2008) - 2007
- [j1]Teruki Ishido, Hisayoshi Matsuo, Takuma Katayama, Tetsuzo Ueda, Kaoru Inoue, Daisuke Ueda:
Depth profiles of strain in AlGaN/GaN heterostructures grown on Si characterized by electron backscatter diffraction technique. IEICE Electron. Express 4(24): 775-781 (2007)
Coauthor Index
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