"Depth profiles of strain in AlGaN/GaN heterostructures grown on Si ..."

Teruki Ishido et al. (2007)

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DOI: 10.1587/ELEX.4.775

access: open

type: Journal Article

metadata version: 2021-02-12

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Teruki Ishido, Hisayoshi Matsuo, Takuma Katayama, Tetsuzo Ueda, Kaoru Inoue, Daisuke Ueda:
Depth profiles of strain in AlGaN/GaN heterostructures grown on Si characterized by electron backscatter diffraction technique. IEICE Electron. Express 4(24): 775-781 (2007)

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