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ORCIDAbhijit Biswas
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2020 – today
- 2024
[j17]Abhijit Biswas, David I. Ketcheson
, Benjamin Seibold, David Shirokoff:
Algebraic Structure of the Weak Stage Order Conditions for Runge-Kutta Methods. SIAM J. Numer. Anal. 62(1): 48-72 (2024)- [i7]David I. Ketcheson, Abhijit Biswas:
Approximation of arbitrarily high-order PDEs by first-order hyperbolic relaxation. CoRR abs/2405.16841 (2024) - 2023
- [j16]Abhijit Biswas, David I. Ketcheson:
Multiple-Relaxation Runge Kutta Methods for Conservative Dynamical Systems. J. Sci. Comput. 97(1): 4 (2023) - [j15]Kallolini Banerjee, Abhijit Biswas:
Enhanced analog/RF performance of hybrid charge plasma based junctionless C-FinFET amplifiers at 10 nm technology node. Microelectron. J. 131: 105662 (2023) - [c3]Sagar R. Siva Vidya, Pooja Jonnalagadda, Abhijit Biswas:
Characterization of Tool Eccentricity of a CNC Milling Machine Using High Speed Imaging. ICST 2023: 1-6 - [i6]Abhijit Biswas, David I. Ketcheson:
Multiple-Relaxation Runge Kutta Methods for Conservative Dynamical Systems. CoRR abs/2302.05235 (2023) - [i5]Abhijit Biswas, David I. Ketcheson:
Accurate Solution of the Nonlinear Schrödinger Equation via Conservative Multiple-Relaxation ImEx Methods. CoRR abs/2309.02324 (2023) - [i4]Abhijit Biswas, David I. Ketcheson, Steven Roberts, Benjamin Seibold, David Shirokoff:
Explicit Runge Kutta Methods that Alleviate Order Reduction. CoRR abs/2310.02817 (2023) - 2022
- [j14]Abhijit Biswas, Anwar Hussain:
Design and Analysis of a New Reduced Switch Scalable MIN Fat Tree Topology. Computación y Sistemas 26(2) (2022) - [j13]Abhijit Biswas, Dushyanta Dutta:
Interference Cancellation and Efficient Channel Allocation for Primary and Secondary Users Using Hybrid Cognitive (M2M) Mac Routing Protocol. Int. J. Inf. Secur. Priv. 16(2): 1-18 (2022) - [c2]Sudipta Majumder, Abhijit Biswas:
Optimal MAC Scheduling Algorithm for Time-Sensitive Applications in Multi-UE Scenarios in 5G NR MmWave. CICBA 2022: 220-236 - [i3]Abhijit Biswas, David I. Ketcheson, Benjamin Seibold, David Shirokoff:
Algebraic Structure of the Weak Stage Order Conditions for Runge-Kutta Methods. CoRR abs/2204.03603 (2022) - [i2]Abhijit Biswas, David I. Ketcheson, Benjamin Seibold, David Shirokoff:
Design of DIRK Schemes with High Weak Stage Order. CoRR abs/2204.11264 (2022) - 2020
- [i1]Abhijit Biswas, Benjamin Seibold:
Infinite Time Solutions of Numerical Schemes for Advection Problems. CoRR abs/2010.15365 (2020)
2010 – 2019
- 2019
- [j12]Debapriya Roy, Abhijit Biswas:
Effects of asymmetric underlap spacers on nanoscale junctionless transistors and design of optimised CMOS amplifiers. IET Circuits Devices Syst. 13(4): 510-518 (2019) - [j11]Sumedha Dasgupta, Chandrima Mondal, Abhijit Biswas:
Role of grooving angle of 14-nm-InAs channel quantum well MOSFETs in improving analogue/RF and linearity performance. IET Circuits Devices Syst. 13(8): 1292-1298 (2019) - 2016
- [c1]Abhijit Biswas, Manivannan Muniyandi, Mandayam A. Srinivasan:
Affordable Wideband Sensor Coupled Vibrotactile Actuator Systems for Psychophysical Experiments. EuroHaptics (1) 2016: 419-429 - 2015
- [j10]Abhijit Biswas, Manivannan Muniyandi, Mandayam A. Srinivasan:
Multiscale Layered Biomechanical Model of the Pacinian Corpuscle. IEEE Trans. Haptics 8(1): 31-42 (2015) - [j9]Abhijit Biswas, Manivannan Muniyandi, Mandayam A. Srinivasan:
Vibrotactile Sensitivity Threshold: Nonlinear Stochastic Mechanotransduction Model of the Pacinian Corpuscle. IEEE Trans. Haptics 8(1): 102-113 (2015) - 2014
- [j8]Abhijit Biswas, Swagata Bhattacherjee:
Temperature dependent model for threshold voltage and subthreshold slope of strained-Si channel MOSFETs with a polysilicon gate. Microelectron. Reliab. 54(8): 1527-1533 (2014) - 2013
- [j7]Abhijit Biswas, Swagata Bhattacherjee:
Accurate modeling of the influence of back gate bias and interface roughness on the threshold voltage of nanoscale DG MOSFETs. Microelectron. Reliab. 53(3): 363-370 (2013) - 2012
- [j6]P. S. Das, Abhijit Biswas:
Investigations on electrical characteristics and reliability properties of MOS capacitors using HfAlOx on n-GaAs substrates. Microelectron. Reliab. 52(1): 112-117 (2012) - 2011
- [j5]Swagata Bhattacherjee, Abhijit Biswas:
Performance analysis of long Ge channel double gate (DG) p MOSFETs with high-k gate dielectrics based on carrier concentration formulation. Microelectron. Reliab. 51(6): 1105-1112 (2011) - [j4]Hamid Hemmati, Abhijit Biswas, Ivan B. Djordjevic:
Deep-Space Optical Communications: Future Perspectives and Applications. Proc. IEEE 99(11): 2020-2039 (2011) - 2010
- [j3]P. S. Das, Abhijit Biswas:
Charge trapping and reliability characteristics of ultra-thin HfYOx films on n-GaAs substrates. Microelectron. Reliab. 50(12): 1924-1930 (2010)
2000 – 2009
- 2007
- [j2]Abhijit Biswas, Bruce E. Moision, William T. Roberts, William H. Farr, Andrew Gray, Kevin Quirk, Jon Hamkins, Michael K. Cheng, Jonathan Gin, Michael A. Nakashima, Gerardo G. Ortiz, Sabino Piazzolla, Carl Christian Liebe, David L. Losh:
Palomar Receive Terminal (PRT) for the Mars Laser Communication Demonstration (MLCD) Project. Proc. IEEE 95(10): 2045-2058 (2007) - [j1]Hamid Hemmati, Abhijit Biswas, Don M. Boroson:
Prospects for Improvement of Interplanetary Laser Communication Data Rates by 30 dB. Proc. IEEE 95(10): 2082-2092 (2007)
Coauthor Index
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