"Performance analysis of long Ge channel double gate (DG) p MOSFETs with ..."

Swagata Bhattacherjee, Abhijit Biswas (2011)

> Home

Details and statistics

DOI: 10.1016/J.MICROREL.2011.02.004

access: closed

type: Journal Article

metadata version: 2020-02-22

- view
  - electronic edition via DOI
  - unpaywalled version
  authority control:
- export record
  dblp key:
  - journals/mr/BhattacherjeeB11
- ask others
- share record
  persistent URL:
  - https://dblp.org/rec/journals/mr/BhattacherjeeB11
Swagata Bhattacherjee, Abhijit Biswas:
Performance analysis of long Ge channel double gate (DG) p MOSFETs with high-k gate dielectrics based on carrier concentration formulation. Microelectron. Reliab. 51(6): 1105-1112 (2011)

manage site settings

To protect your privacy, all features that rely on external API calls from your browser are turned off by default. You need to opt-in for them to become active. All settings here will be stored as cookies with your web browser. For more information see our F.A.Q.